Method for patterning an organic antireflection layer
AssigneeInfineon Technologies AG
InventorsMatthias Lehr, Gregoire Grandremy
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Abstract
An antireflection coating (ARC) polymer layer is patterned by DUV (deep ultraviolet) lithography followed by an ARC open etching step and subsequent etching of the metal layer. Low resist consumption and hence steeper resist sidewalls are achieved by virtue of the ARC polymer intermediate layer being etched with a CF4 ARC open process with high selectivity with respect to the photoresist. The gas flows are set to the following ranges: CF4 35-45 sccm, CHF3 17-23 sccm, O2 5-7 sccm and Ar 80-120sccm.
Claims2
In a method for patterning an organic antireflection layer by DUV lithography followed by ARC open etching, which comprises:
- providing a substrate with a metal layer, a photoresist, and an antireflection layer as an intermediate layer of an organic polymer formed between the photoresist and the metal layer;
- etching the (ARC polymer) intermediate layer in a CF4 ARC open process with the following process parameters:
- 3 CF4 35 . . . 45 sccm CHF3 17 . . . 23 sccm O2 5 . . . 7 sccm Ar 80 . . . 120 sccm Pressure 80 . . . 120 mtorr Power 550 . . . 650 Watts
- and with high selectivity with respect to the photoresist;
- and
- subsequently etching the metal layer beneath the antireflection layer.
Dependencies are inferred from the claim text.