Electrode pad in semiconductor device and method of producing the same
AssigneeSeiko Epson Corporation
InventorShinji Magara
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Abstract
An electrode pad PAD, which is a layer 11 substantially made of aluminum to be connected to an internal conductive region, is formed on an interlayer insulation film 10 made of an SiO2 layer or the like so as to be exposed in an opening portion of a passivation film 12 as the uppermost layer. For example, a bonding wire not shown in the drawing is connected to the electrode pad PAD. The exposed surface of the electrode pad PAD comprises a rough surface R roughened by means of an etching solution. Thereby, the surface of the electrode pad PAD has a substantially constant roughness, which increases the contact area for the bonding wire not shown in the drawing.
Claims5
An electrode pad in a semiconductor device which is an end portion of a metallic wiring made of aluminum as a major component and formed on an insulation film of a semiconductor integrated circuit, wherein the exposed surface of the metallic wiring having the periphery surrounded by a protective film comprises an etching solution-roughened surface.
A method of producing an electrode pad in a semiconductor device by which an end portion of a metallic wiring made of aluminum as a major component formed on an insulation film of a semiconductor integrated circuit is produced, comprising the steps of:
- forming a protective film on the metallic wiring;
- dry-etching the protective film to form a pad opening so that the metallic wiring corresponding to at least a pad pattern is exposed;
- and
- cleaning the exposed surface of the metallic wiring present on the bottom of the pad opening by means of an etching solution.
Dependencies are inferred from the claim text.