Semiconductor device and wiring forming method in semiconductor device
AssigneeSony Corporation
InventorsJunichi Aoyama, Toshio Kobayashi
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Abstract
The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.
Claims13
A semiconductor device, wherein a gap is formed between wirings formed on a substrate, and the gap is filled with gas having a thermal conductivity equal to or higher than three times that of air at 0° C.
A wiring forming method in a semiconductor device, comprising the steps of:
- (A) forming a wiring and a filling layer filled between wirings, on a substrate;
- (B) forming a gas permeable film on the wiring and the filling layer;
- (C) removing the filling layer through the gas permeable film so as to form a gap between the wirings;
- (D) filling a gas having a thermal conductivity equal to or higher than three times that of air at 0° C. through the gas permeable film into the gap;
- and
- (E) forming a gas impermeable film on the gas permeable film.
A wiring forming method in a semiconductor device, comprising the steps of:
- (A) forming a plurality of wirings on a substrate;
- and
- (B) forming a gas impermeable film on the wirings and above gaps existing between the wirings, in gas atmosphere having a thermal conductivity equal to or higher than three times that of air at 0° C.
A wiring forming method in a semiconductor device, comprising the steps of:
- (A) forming a plurality of wirings on a substrate;
- (B) forming a gas permeable film on the wirings and above gaps existing between the wirings;
- (C) filling a gas having a thermal conductivity equal to or higher than three times that of air at 0° C. through the gas permeable films into the gaps;
- and
- (D) forming a gas impermeable film on the gas permeable film.
Dependencies are inferred from the claim text.