Method of fabricating a patterned metal-containing layer on a semiconductor wafer
AssigneeInfineon Technologies AG
InventorsVolker Weinrich, Gerhard Beitel, Andreas Hauser, Peter Bosk
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Abstract
A metal-containing layer is formed on a substrate. A mask layer is formed on the metal-containing layer. The mask layer is patterned by way of a lithographically fabricated mask. The metal-containing layer is patterned with the patterned mask layer, to thereby form an electrode out of the metal-containing layer. A protective layer is deposited on the mask layer and on the substrate. The protective layer undergoes chemical mechanical polishing, during which the protective layer is removed and the electrode is uncovered.
Claims11
A method of fabricating a patterned metal-containing layer on a semiconductor wafer, which comprises the following steps:
- providing a substrate;
- forming a metal-containing layer on the substrate;
- forming a mask layer on the metal-containing layer;
- patterning the mask layer with a lithographically fabricated mask to form a patterned mask layer;
- patterning the metal-containing layer, which contains platinum, with the patterned mask layer;
- depositing a protective layer, containing silicon nitride, on the patterned mask layer and on the substrate;
- and
- chemically-mechanically polishing the protective layer and the patterned mask layer, to thereby remove the protective layer and the patterned mask layer from the metal-containing layer and thereby uncovering the metal-containing layer.
Dependencies are inferred from the claim text.