Method of enhanced oxidation of MOS transistor gate corners
AssigneeInternational Business Machines Corporation
InventorsOmer Dokumaci, Oleg Gluschenkov, Suryanarayan G. Hegde, Richard Kaplan, Mukesh Khare
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Abstract
A method of enhancing the rate of transistor gate corner oxidation, without significantly increasing the thermal budget of the overall processing scheme is provided. Specifically, the method of the present invention includes implanting ions into gate corners of a Si-containing transistor, and exposing the transistor including implanted transistor gate corners to an oxidizing ambient. The ions employed in the implant step include Si; non-retarding oxidation ions such as O, Ge, As, B, P, In, Sb, Ga, F, Cl, He, Ar, Kr, and Xe; and mixtures thereof.
Claims22
A method for oxidizing transistor gate corners comprising the steps of:
- (a) implanting ions into gate corners of a Si-containing transistor, wherein said ions are selected from the group consisting of non-oxidation retarding ions, Si ions and mixtures thereof;
- and
- (b) exposing the Si-containing transistor including implanted transistor gate corners to an oxidizing ambient.
Dependencies are inferred from the claim text.