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US 2002/0160588 A1Published application
Method of forming a junction in semiconductor device using halo implant processing
OwnerJeong Soo Kim, Sang Ho Sohninventors
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Abstract
A method for forming a junction in a semiconductor device including the steps of: forming a photoresist film pattern on a semiconductor substrate excluding a halo implant region; performing a first halo implant process on the halo implant region of the semiconductor substrate by using a tilt angle of about 45°; and performing a second halo implant process on the halo implant region of the semiconductor substrate by using a tilt angle of about 0°.
Claims13
A method for forming a junction in a semiconductor device, comprising the steps of:
- forming a photoresist film pattern on a semiconductor substrate excluding a first region;
- performing a first halo implant process on the first region of the semiconductor substrate by using a tilt angle of about 45°;
- and
- performing a second halo implant process on the first region of the semiconductor substrate by using a tilt angle of about 0°.
1 more element
A method for forming a junction in a semiconductor device, comprising the steps of:
- providing a semiconductor substrate divided into a first conductive type MOS region and a second conductive type MOS region;
- forming a photoresist film pattern on the second conductive type MOS region;
- performing first and second halo implant processes on the first conductive type MOS region at about a 45° tilt angle and at twist angles of about 0° and 180°, respectively;
- and
- performing a third halo implant process on the first conductive type MOS region, by using a tilt angle of about 0°.
2 more elements
Dependencies are inferred from the claim text.