Method to increase carbon and boron doping concentrations in Si and SiGe films
AssigneeInternational Business Machines Corporation
InventorsBasanth Jagannathan, Jack O. Chu, Ryan W. Wuthrich, Byeongju Park
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Abstract
We provide a method of doping an Si or SiGe film with carbon or boron. By reducing the silicon precursor pressure, heavily-doped films may be obtained. A single dopant source may be used. The doped Si and SiGe films are of suitable quality for use in a transistor such as an HBT.
Claims15
A method of reducing film growth rate when growing a carbon- or boron-doped silicon film or silicon-germanium film, comprising:
- carbon or boron-doping while supplying a silicon precursor and optionally a germanium precursor to a substrate, at reduced pressure of about 0.1 to 100 millitorr.
A silicon or silicon-germanium film doped with carbon or boron wherein the dopant profile is spiked.
A transistor comprising a silicon-germanium-carbon layer with a carbon content of about 1×1017 to 1×1021/cm3.
A method of growing a film without sharp pressure transitions, comprising:
- carbon or boron-doping while supplying a silicon precursor and optionally a germanium precursor to a substrate, at reduced pressure of about 0.1 to 100 millitorr.
Dependencies are inferred from the claim text.