Capacitor for semiconductor devices and a method of fabricating such capacitors
AssigneeHynix Semiconductor Inc.
InventorKee Jeung Lee
Life of this patent
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Abstract
Disclosed is a capacitor for a semiconductor device and a method of fabricating such capacitors including the steps of providing a semiconductor substrate, forming a lower electrode on the semiconductor substrate, forming a Ta1-xAlxOyNz (0.01≦x≦05, 2≦y≦2.5, 0.01≦z≦0.1) dielectric layer on the lower electrode, and forming an upper electrode on the Ta1-xAlxOyNz dielectric layer so as to provide excellent electric characteristics as well as sufficient electric capacitance required for the proper operation of highly integrated semiconductor devices.
Claims38
A method of fabricating a capacitor for a semiconductor device comprising the steps of:
- providing a semiconductor substrate;
- forming a lower electrode on the semiconductor substrate;
- forming a Ta1-xAlxOyNz (0.01≦x≦0.5, 2≦y≦2.5, 0.01≦z≦0.1) dielectric layer on the lower electrode;
- and
- forming an upper electrode on the Ta1-xAlxOyNz dielectric layer.
A method of fabricating a capacitor in a semiconductor device comprising the steps of:
- providing a semiconductor substrate;
- forming a lower electrode on the semiconductor substrate;
- forming a Ta1-xAlxOyNz (0.01≦x≦0.5, 2≦y≦2.5, 0.01≦z≦0.1) dielectric layer on the lower electrode;
- oxidizing the Ta1-xAlxOyNz dielectric layer in a low temperature plasma to form an oxidized Ta1-xAlxOyNz layer;
- annealing the oxidized Ta1-xAlxOyNz dielectric layer to induce crystallization to form a crystallized Ta1-xAlxOyNz layer;
- and
- forming an upper electrode on the crystallized Ta1-xAlxOyNz dielectric layer.
A method of fabricating a capacitor in a semiconductor device according to claim, further comprising treating a surface of the lower electrode, the step of treating comprising nitridating or oxidizing the lower electrode before forming the Ta1-xAlxOyNz dielectric layer.
A capacitor in a semiconductor device comprising:
- a semiconductor substrate;
- a lower electrode on the semiconductor substrate;
- a Ta1-xAlxOyNz (0.01≦x≦0.5, 2≦y≦2.5, 0.01≦z≦0.1) dielectric layer on the lower electrode;
- and
- an upper electrode on the Ta1-xAlxOyNz dielectric layer.
Dependencies are inferred from the claim text.