Deposition chamber and method for depositing low dielectric constant films
AssigneeApplied Materials, Inc.
InventorsShijian Li, Yaxin Wang, Fred C. Redeker, Tetsuya Ishikawa, Alan W. Collins
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AssigneeApplied Materials, Inc.
InventorsShijian Li, Yaxin Wang, Fred C. Redeker, Tetsuya Ishikawa, Alan W. Collins
Estimating the term…
An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
A substrate processing system comprising:
The substrate processing system comprising:
A deposition chamber assembly comprising:
An improved deposition chamber of the type comprising a vacuum chamber housing a substrate support and a process gas distributor with first process gas exits positioned around the substrate support, the improvement comprising:
A method for depositing a film onto a substrate within a deposition chamber comprising the steps of:
A method for depositing a film onto a substrate within a deposition chamber comprising the steps of:
Dependencies are inferred from the claim text.