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AssigneeJapan Pionics Co., Ltd.
InventorsShiro Sakai, Yukichi Takamatsu, Yuji Mori, Hong Xing Wang, Yoshiyasu Ishihama, Yutaka Amijima
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There is disclosed a chemical vapor deposition apparatus for a semiconductor film, which comprises a horizontal tubular reactor, a susceptor, a heater, a feed gas introduction portion and a reaction gas exhaust portion, wherein the constitution of the apparatus is such that part of the tubular reactor walls inclines downward from the upstream side of the feed gas passageway towards the downstream side thereof so as to change the direction of the gas stream to an oblique downward direction or is such that the spacing between the susceptor and the tubular reactor wall in opposition thereto is made smaller than the vertical spacing in the tubular reactor wall from a gas feed port in the feed gas introduction portion to the upstream side end of the feed gas passageway for the susceptor. Also disclosed herein a chemical vapor deposition method using the apparatus. Thereby a uniform semiconductor film with good crystallinity is obtained even in the case of effecting chemical vapor deposition of a large-size substrate, or a plurality of substrates at the same time, or at elevated temperatures.
A chemical vapor deposition apparatus for a semiconductor film, which comprises a horizontal tubular reactor equipped with a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion arranged such that the direction of a feed gas supplied in the tubular reactor is made substantially parallel to the substrate and a reaction gas exhaust portion, wherein the constitution of the apparatus is such that part of the tubular reactor walls in opposition to a substrate inclines downward from the upstream side of the feed gas passageway towards the downstream side thereof.
A chemical vapor deposition apparatus for a semiconductor film, which comprises a horizontal tubular reactor equipped with a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion arranged such that the direction of a feed gas supplied in the tubular reactor is made substantially parallel to the substrate, and a reaction gas exhaust portion, wherein the constitution of the apparatus is such that the spacing between the susceptor and the tubular reactor wall in opposition thereto is made smaller than the vertical spacing in the tubular reactor wall from a gas feed port in the feed gas introduction portion to the upstream side end of the feed gas passageway for the susceptor.
A chemical vapor deposition method which comprises mounting a substrate on a susceptor in a horizontal tubular reactor, heating the substrate with a heater, and supplying the substrate with a gas containing a feed gas in the direction substantially parallel to the substrate so as to subject a semiconductor film to chemical vapor deposition on said substrate, wherein the direction of the gas stream is changed to an oblique downward direction by such a constitution that part of the tubular reactor walls in opposition to a substrate inclines downward from the upstream side of the feed gas passageway towards the downstream side thereof.
A chemical vapor deposition method which comprises mounting a substrate on a susceptor in a horizontal tubular reactor, heating the substrate with a heater, and supplying the substrate with a gas containing a feed gas in the direction substantially parallel to the substrate so as to subject a semiconductor film to chemical vapor deposition on said substrate, wherein the gas containing a feed gas is supplied into the horizontal tubular reactor having such a constitution that the spacing between the susceptor and the tubular reactor wall in opposition thereto is made smaller than the vertical spacing in the tubular reactor wall from a gas feed port in the feed gas introduction portion to the upstream side end of the feed gas passageway for the susceptor.
Dependencies are inferred from the claim text.