Electron device
AssigneeTDK Corporation
InventorsKatsuaki Yanagiuchi, Wakako Shiramura
Life of this patent
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AssigneeTDK Corporation
InventorsKatsuaki Yanagiuchi, Wakako Shiramura
Estimating the term…
An electron device includes a first layer formed of a metal or metal alloy and a second layer adjoining the first layer and formed of a metal or metal alloy different from that of the first layer. In the region adjacent the first layer and the second layer, there is provided a concentration gradient layer formed of a mixture containing a metal or metal alloy contained in the first layer and a metal or metal alloy contained in the second layer, A covering film covers end faces of the first and second layers. With this arrangement, when a cleaning as by etching is carried out on the end faces of the multilayered film structure of the electron device, the end faces are etched in relatively smoothly connected surfaces because of the etched end face of the concentration gradient layer in a gentle slope, so that coverage of the covering film on the end faces of the multilayered film structure can be improved to increase the adherence strength of the covering film.
An electron device including a laminated film and a covering film,
An electron device including a laminated film and a covering film,
A thin film magnetic head including a slider, a magnetic converting element and a covering film,
A thin film magnetic head including a slider, a magnetic converting element and a covering film,
Dependencies are inferred from the claim text.