Current perpendicular-to-the-plane magnetoresistance read head
AssigneeTDK Corporation
InventorsShuxiang Li, Satoru Araki
Life of this patent
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AssigneeTDK Corporation
InventorsShuxiang Li, Satoru Araki
Estimating the term…
A magnetoresistive (MR) head including, for example, a spin valve (SV) MR element having a sense current passing through the SV in a current-perpendicular-to-the-plane (CPP) mode. A free layer of the SV is transversely biased by a magnetostatic coupling field from an in-stack transverse bias layer. The transverse bias layer is separated from the free layer by a nonmagnetic high resistive spacer layer, which can cause strong spin memory loss and also provide a longitudinal biasing to the free layer of the SV. An out of stack longitudinal bias arrangement may alternatively be provided to impart a longitudinal bias to the free layer. The SV MR element comprises a MR promoting (MRP) layer either within in or adjacent to the free layer 90 or the pinned layer 110 This MR head structure provides enhanced linearity of the response to the magnetic field being sensed.
A current perpendicular-to-the-plane magnetoresistance (CPP-MR) read head having a stacked structure, comprising:
A magnetoresistance read head having a stacked structure, comprising:
A method of magnetically biasing a current perpendicular-to-the-plane magnetoresistance (CPP-MR) read head having a stacked structure, comprising:
Dependencies are inferred from the claim text.