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US 2002/0158645 A1Published application
Method and apparatus for measuring temperature parameters of an ISFET using hydrogenated amorphous as a sensing film
AssigneeNational Yunlin University of Science and Technology
InventorsJung Chuan Chou, Yii Fang Wang
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Abstract
A method and an apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.
Claims7
An apparatus of measuring temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, comprising:
- a semiconductor substrate where the ISFET is formed, wherein the semiconductor substrate comprises a pair of source and drain separated by each other and the sensing film insulated from the surface of the semiconductor substrate;
- a buffer solution for contacting the ISFET;
- a light-isolating container for loading the buffer solution and isolating light;
- a heater for heating the buffer solution;
- a temperature controller connected with the heater;
- a test fixture connected with the source and drain of the ISFET;
- and
- a current/voltage measuring device connected the test fixture.
5 more elements
Dependencies are inferred from the claim text.