Surface acoustic wave device
AssigneeSumitomo Electric Industries, Ltd.
InventorsKatsuhiro Itakura, Akihiro Hachigo, Hideaki Nakahata, Satoshi Fujii, Shinichi Shikata
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AssigneeSumitomo Electric Industries, Ltd.
InventorsKatsuhiro Itakura, Akihiro Hachigo, Hideaki Nakahata, Satoshi Fujii, Shinichi Shikata
Estimating the term…
A surface acoustic wave (SAW) device is provided that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kb1=5·2π·(tz/λ) and kh2=5·2π·(ts/λ), where λ signifies the wavelength of the fundamental wave of the second mode of the SAW. The SAW device uses the fifth harmonic of the second mode of the SAW.
A surface acoustic wave (SAW) device, being characterized by the conditions of:
A SAW device, being characterized by the conditions of:
Dependencies are inferred from the claim text.