Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a first insulating film formed over a semiconductor substrate;
• a first metal pattern buried in the first insulating film;
• and
• a first cap layer formed on the first metal pattern and made of a substance that is made of zirconium, titanium, hafnium, zirconium nitride, or any one of their compounds.

A manufacturing method of a semiconductor device comprising the steps of:

• forming a first insulating film over a semiconductor substrate;
• forming a first trench or a first hole in the first insulating film;
• forming a first metal pattern by burying a copper in the first trench or the first hole;
• and
• forming a first cap layer made of a substance, a first portion on the first metal pattern has a smaller electrical resistance than a second portion on the first insulating film, on the first metal pattern and the first insulating film.