Ruthenium interconnect for an integrated circuit and method for its fabrication
AssigneeMicron Technology, Inc.
InventorsTongbi Jiang, Li Li
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Abstract
A multi-layered metal bond pad for a semiconductor die having a conductive metal layer and an overlying ruthenium electrode layer. The ruthenium electrode layer protects the conductive metal from oxidation due to ambient environmental conditions. An interconnect structure such as a wire bond or solder ball may be attached to the ruthenium layer to connect the semiconductor die to a lead frame or circuit support structure. Also disclosed are processes for forming the ruthenium layer.
Claims57
An interconnect component for a semiconductor die comprising:
- a conductive bonding pad containing an ambient oxidizable metal layer;
- and
- a ruthenium layer covering at least a portion of the ambient oxidizable metal layer.
A flip-chip interconnect bond comprising:
- a conductive bonding pad containing an ambient oxidizable metal layer;
- a ruthenium layer covering at least a portion of the ambient oxidizable metal layer;
- and
- an electrically conductive bump bonded to the ruthenium layer.
An integrated circuit comprising:
- a semiconductor die having integrated circuitry formed on a substrate;
- a conductive bonding pad on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding pad having an ambient oxidizable metal layer;
- a ruthenium layer covering the ambient oxidizable metal layer;
- an electrically conductive structure bonded to the ruthenium layer;
- and
- a circuit substrate having a bonding site, wherein the electrically conductive structure of the semiconductor die is bonded to the bonding site.
An electronic circuit bonding interconnect component comprising:
- a bond pad having an aluminum layer;
- a ruthenium layer covering the aluminum layer;
- and
- an electrically conductive structure bonded to the ruthenium layer.
A method of forming a ruthenium interconnect, comprising the steps of:
- providing a bond pad having a layer of an ambient oxidizable metal;
- providing an aqueous ruthenium solution;
- and
- exposing the bond pad to said aqueous ruthenium solution for a sufficient time to form a ruthenium layer of a desired thickness on the bond pad.
A method of forming a ruthenium interconnect, comprising the steps of:
- providing a semiconductor die having at least one bond pad, wherein said at least one bond pad includes an ambient oxidizable metal layer and a metal oxide layer on the ambient oxidizable metal layer;
- removing said metal oxide layer;
- providing an aqueous ruthenium solution;
- and
- exposing said at least one bond pad to said aqueous ruthenium solution for a sufficient time to form a ruthenium layer of a desired thickness on said at least one bond pad.
A method of forming a ruthenium interconnect, comprising the steps of:
- providing a semiconductor die having at least one bond pad, wherein said at least one bond pad includes an ambient oxidizable metal layer and a metal oxide layer on the ambient oxidizable metal layer;
- providing an aqueous acid solution;
- removing said metal oxide layer by exposing said at least one bond pad to the aqueous acid solution;
- providing an aqueous ruthenium solution;
- and
- exposing said at least one bond pad to said ruthenium solution until a ruthenium layer of a desired thickness is formed on said at least one bond pad.
A method of forming a ruthenium interconnect, comprising the steps of:
- providing a semiconductor die having at least one bond pad, wherein said at least one bond pad has an ambient oxidizable metal layer and a metal oxide layer on the ambient oxidizable metal layer;
- providing an aqueous solution comprising an acid and a ruthenium compound;
- providing an electric current to the aqueous solution;
- and
- exposing said at least one bond pad to the aqueous solution for a predetermined time until the metal oxide layer has been removed and a ruthenium layer of a desired thickness is formed on said at least one bond pad.
Dependencies are inferred from the claim text.