Cmos-type solid state imaging device that prevents charge inflow into optical black
AssigneeFujitsu Limited
InventorsKoji Fujiwara, Iwao Sugiyama, Toshitaka Mizuguchi
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Abstract
A solid state imaging device includes a semiconductor substrate, a light receiving section which is provided in a surface of the semiconductor substrate, and includes an array of pixels that accumulate electric charge through photoelectric conversion of incoming light, a light shielding section which includes an array of pixels formed in the surface of the semiconductor substrate and shielded from light, and a drain which is situated between the light receiving section and the light shielding section, and is formed to a depth deeper in the semiconductor substrate than the light receiving section and the light shielding section.
Claims8
A solid state imaging device, comprising:
- a semiconductor substrate;
- a light receiving section which is provided in a surface of said semiconductor substrate, and includes an array of pixels that accumulate electric charge through photoelectric conversion of incoming light;
- a light shielding section which includes an array of pixels formed in the surface of said semiconductor substrate and shielded from light;
- and
- a drain which is situated between said light receiving section and said light shielding section, and is formed to a depth deeper in said semiconductor substrate than said light receiving section and said light shielding section.
A solid state imaging device, comprising:
- a semiconductor substrate;
- a semiconductor layer formed on said semiconductor substrate;
- a light receiving section which is formed in a surface of said semiconductor layer, and includes an array of pixels that accumulate electric charge through photoelectric conversion of incoming light;
- a light shielding section which includes an array of pixels formed in the surface of said semiconductor layer and shielded from light;
- and
- a drain which is situated between said light receiving section and said light shielding section, and is formed to a depth deeper in said semiconductor substrate than said light receiving section and said light shielding section.
Dependencies are inferred from the claim text.