Semiconductor memory device and fabrication method therefor

A method for fabricating a semiconductor memory device which includes

• a plurality of access transistors and memory capacitors connected to drains of said plurality of access transistors in a memory cell region, and
• a plurality of logic transistors in a logic region, said method comprising the steps of:
• forming a gate electrode on a gate insulation film of each logic transistor and on a gate insulation film of each access transistor;
• coating an insulation film on said gate electrode of said each logic transistor to form a sidewall for said gate electrode, and coating the same insulation film on a source and a drain of each access transistor;
• forming a first silicide film on a source and a drain of said each logic transistor;
• coating an insulation film around said sidewall of said each logic transistor, and laminating the same insulation film on said source and said drain of said each access transistor so as to form a laminated insulation film;
• polishing said logic region and said memory cell region together so as to expose said gate electrode of said each logic transistor and said gate electrode of said each access transistor, and polishing said laminated insulation film on said source and said drain of said each access transistor;
• and
• forming a second silicide film and a third silicide film on said gate electrode of said each logic transistor and on said gate electrode of said access transistor, respectively.