Back to results
US 2002/0158265 A1Published application
Structure and method for fabricating high contrast reflective mirrors
AssigneeMotorola, Inc.
InventorKurt W. Eisenbeiser
Life of this patent
Estimating the term…
Abstract
A high contrast reflective mirror includes a plurality of alternating first monocrystalline layers and second monocrystalline layers. The first monocrystalline layers are formed of an oxide material that has a cubic structure and a first index of refraction. The second monocrystalline layers are formed of a semiconductor material that has a second index of refraction. The first index of refraction and the second index of refraction differ by at least about 0.5
Claims48
A high contrast reflective mirror comprising:
- a plurality of alternating first monocrystalline layers and second monocrystalline layers,
- wherein said first monocrystalline layers comprise an oxide material having a cubic structure and a first index of refraction;
- wherein said second monocrystalline layers comprise a semiconductor material having a second index of refraction, and
- wherein said first index of refraction and said second index of refraction differ by at least about 0.5.
1 more element
A vertical-cavity surface-emitting laser comprising:
- a monocrystalline substrate;
- a first DBR mirror epitaxially grown overlying said substrate, wherein said first DBR mirror comprises:
- a plurality of alternating first monocrystalline layers and second monocrystalline layers,
- wherein said first monocrystalline layers comprise an oxide material having a cubic structure and a first index of refraction;
- wherein said second monocrystalline layers comprise a semiconductor material having a second index of refraction, and
- wherein said first index of refraction and said second index of refraction differ by at least about 0.5;
- an active layer epitaxially grown overlying said first DBR mirror;
- and
- a second DBR mirror epitaxially grown overlying said active layer, wherein said second DBR mirror comprises:
- a plurality of alternating third monocrystalline layers and fourth monocrystalline layers,
- wherein said third monocrystalline layers comprise an oxide material having a cubic structure and a third index of refraction;
- wherein said fourth monocrystalline layers comprise a semiconductor material having a fourth index of refraction, and
- wherein said third index of refraction and said fourth index of refraction differ by at least about 0.5.
10 more elements
A vertical-cavity surface-emitting laser circuit comprising:
- a monocrystalline substrate;
- a portion of an MOS circuit formed in said substrate;
- a portion of a vertical-cavity surface-emitting laser overlying said substrate, wherein said portion of said vertical-cavity surface-emitting laser comprises:
- a first DBR mirror epitaxially grown overlying said substrate, wherein said first DBR mirror comprises:
- a plurality of alternating first monocrystalline layers and second monocrystalline layers,
- wherein said first monocrystalline layers comprise an oxide material having a cubic structure and a first index of refraction;
- wherein said second monocrystalline layers comprise a semiconductor material having a second index of refraction, and
- wherein said first index of refraction and said second index of refraction differ by at least about 0.5;
- an active layer epitaxially grown overlying said first DBR mirror;
- a second DBR mirror epitaxially grown overlying said active layer, wherein said second DBR mirror comprises:
- a plurality of alternating third monocrystalline layers and fourth monocrystalline layers;
- wherein said third monocrystalline layers comprise an oxide material having a cubic structure and a third index of refraction;
- wherein said fourth monocrystalline layers comprise a semiconductor material having a fourth index of refraction, and
- wherein said third index of refraction and said fourth index of refraction differ by at least about 0.5;
- and
- an electrical connection electrically coupling said portion of an MOS circuit and said portion of a vertical-cavity surface-emitting laser.
13 more elements
A process for fabricating a high contrast reflective mirror comprising:
- providing a monocrystalline substrate;
- epitaxially growing alternating first monocrystalline layers and second monocrystalline layers,
- wherein said first monocrystalline layers comprise an oxide material having a cubic structure and a first index of refraction,
- wherein said second monocrystalline layers comprise a semiconductor material having a second index of refraction, and
- wherein said first index of refraction and said second index of refraction differ by at least 0.5.
2 more elements
Dependencies are inferred from the claim text.