Light emitting element and method for manufacturing thereof

A light emitting element device comprising:

• a p-n junction portion responsible for light emission formed between a p-type GaAs1-aPa layer (where a represents mixed crystal ratio and satisfies a relation of 0.45≦a≦1.0) and an n-type GaAs1-aPa layer (where a represents mixed crystal ratio and satisfies a relation of 0.45≦a≦1.0);
• and
• a first nitrogen-doped zone formed in the n-type GaAs1-aPa layer so as to include the p-n junction interface,
• wherein the n-type GaAs1-aPa layer has a carrier concentration lower than that of the p-type of GaAs1-aPa layer, and further has a low-nitrogen-concentration zone, having a nitrogen concentration lower than that of the first nitrogen-doped zone, formed so as to be adjacent to such first nitrogen-doped zone.

A method for manufacturing a light emitting element,

• said light emitting element comprising a p-n junction portion responsible for light emission formed between a p-type GaAs1-aPa layer (where a represents mixed crystal ratio and satisfies a relation of 0.45≦a≦1.0) and an n-type GaAs1-aPa layer (where a represents mixed crystal ratio and satisfies a relation of 0.45≦a≦1.0);
• and
• a first nitrogen-doped zone formed in a portion including the p-n junction interface between such p-type GaAs1-aPa layer and n-type GaAs1-aPa layer,
• comprising the steps of:
• fabricating a plurality of light emitting elements by varying nitrogen concentration Y of the first nitrogen-doped zone while keeping a mixed crystal ratio a of the p-type GaAs1-aPa layer and n-type GaAs1-aPa layer constant;
• finding an emission luminance/nitrogen concentration relationship by measuring emission luminance of the individual light emitting elements;
• finding from such relationship a nitrogen concentration Yp whereat the emission luminance of the light emitting element will become maximum;
• and
• forming the first nitrogen-doped zone so as to have a nitrogen concentration larger than the nitrogen concentration Yp.