Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same

A light emitting nitride semiconductor device provided in a form of a nitride semiconductor laser device, comprising:

• a substrate made of nitride semiconductor crystal or a substrate having a nitride semiconductor crystal film grown on a crystalline material other than said nitride semiconductor crystal;
• an n-type layer and a p-type layer made of nitride semiconductor and formed on said substrate;
• and
• a light emitting layer provided between the n-type layer and the p-type layer, wherein
• said light emitting layer is formed of a well layer or a combination of well and barrier layers;
• of said layer or layers forming said light emitting layer, at least said well layer is made of a nitride semiconductor containing an element X, an element Y, and N and Ga, said element X being at least one selected from the group consisting of As, P and Sb, said element Y being at least one selected from the group consisting of Al and In;
• in said nitride semiconductor forming said light emitting layer, the ratio of the number of the atoms of said element X to the sum of the number of the atoms of said element X and the number of the atoms of said N, is not more than 30 atomic percent;
• and
• of said layer or layers forming said light emitting layer, at least said well layer contains as an impurity at least one element selected from the group consisting of Mg, Be, Zn, Cd, C, Si, Ge, Sn, O, S, Se and Te.