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AssigneeSeiko Epson Corporation
InventorsBasil Lui, Piero Migliorato, Ichio Yudasaka, Mitsutoshi Miyasaka
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The present invention provides, in a TFT, a gate electrode and a channel domain that are plurally divided in the channel-length direction, a low-concentration domain that is formed between the divided channel domains, and a low-concentration drain domain that adjoins a second channel domain located closest to a drain domain side among the divided channel domains. Therefore, even if the impurity concentration is relatively high in the low-concentration domain located between the divided channel domains and a low-concentration drain domain, an abnormal increase of drain current in the saturated region can be prevented, and a TFT with a high drain current level can be obtained. Thus, the present invention provides a TFT and its manufacturing method where abnormal increase of drain current in the saturated region can be prevented and the drain current level in the saturated region is sufficiently high.
A thin-film transistor wherein, in a thin-film transistor where a channel domain facing a gate electrode across a gate insulation film and a source/drain domain connected to the channel domain are formed on a semiconductor film formed on the surface of a insulating substrate, said gate electrode and said channel domain are divided plurally in the channel-length direction, a low-concentration domain is formed between the divided channel domains consisting of a semiconductor film with a low impurity concentration, and a low-concentration drain domain with a low impurity concentration adjoins the channel domain located closest to the drain-domain side among said divided channel domains.
A method of manufacturing a thin-film transistor wherein, after sequentially forming a semiconductor film and a gate insulation film, a gate electrode is formed on the surface of the gate insulation film that is divided plurally in the channel-length direction, after which plural channel domains are formed on said semiconductor film that are divided in the channel-length direction, by introducing a low-concentration impurity to said semiconductor film using the gate electrode as a mask.
Dependencies are inferred from the claim text.