Hexagonal lamellar compound based on indium-zinc oxide and process for producing the same
OwnerShinichi Kikkawa, Hidetoshi Ogawa +1inventors
InventorsShinichi Kikkawa, Hidetoshi Ogawa, Shoji Hosokawa
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Abstract
Ar indium zinc oxide based hexagonal layered compound characterized as being represented by the general formula (ZnO)n.In2O3 (m=2-20) and having a mean thickness of 0.001-0.3 μm and a mean aspect ratio (mean major diameter/mean thickness) of 3-1,000.
Claims6
An indium zinc oxide based hexagonal layered compound characterized as being represented by the general formula (ZnO)m.In2O3 (m=2-20) and having a mean thickness of 0.001-0.3 μm and a mean aspect ratio (mean major diameter/mean thickness) of 3-1,000.
The indium zinc oxide based hexagonal layered compound characterized as being derived via substitution of at least one element selected from the group consisting of Sn, Y, Ho, Pb, Bi, Li, Al, Ga, Sb, Si, Cd, Mg, Co, Ni, Zr, Hf, Sc, Yb, Lu, Fe, Nb, Ta, Wf Te, Au, Pt and Ge for a part of In or Zn in the hexagonal layered compound represented by the general formula (ZnO)m.In2O3 (m=2-20), and having a mean thickness of 0.001-0.3 μm and a mean aspect ratio (mean major diameter/mean thickness) of 3-1,000.
Dependencies are inferred from the claim text.