Method for cleaning a substrate in selective epitaxial growth process
AssigneeHynix Semiconductor Inc.
InventorSung Jae Joo
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Abstract
The present invention discloses a method for cleaning a surface of a substrate where a silicon epitaxial layer will be formed before growing the silicon epitaxial layer in a selective epitaxial growth process. Firstly, a high temperature heating element is aligned in a silicon epitaxial layer growth chamber, disposed separated from the substrate, a cleaning gas is inserted into the chamber and is decomposed into an atom or radical state having high reactivity in a gas phase according to heat generation of the high temperature heating element, and is diffused into the substrate, whereby a substrate cleaning reaction is performed at a substrate temperature ranging from 400 to 600° C.
Claims10
A method for cleaning a substrate in a selective epitaxial growth process wherein a high temperature heating element is aligned in a silicon epitaxial layer growth chamber, disposed separated from the substrate, a cleaning gas inserted into the chamber is decomposed in an atom or radical state having high reactivity in a gas phase as a result of heat generation of the high temperature heating element, and diffused into the substrate, whereby a substrate cleaning reaction is performed at a substrate temperature ranging of from 400 to 600° C.
Dependencies are inferred from the claim text.