Method for forming a copper thin film

Abstract

In a method for forming a Cu thin film on a substrate including a Cu-CVD step of forming a first copper film on predetermined surface of a substrate by a CVD process and a plating step of further forming a second copper film on the first copper film by an electrolytic copper plating process using the first copper film as an electrode, a modifying step for modifying the first copper film by exposing it in an active atmosphere is interposed between the Cu-CVD step and the plating step. Thereby, fine voids can be effectively prevented from being formed in the vicinity of the interface between the first copper film and the second copper film.

Dependencies are inferred from the claim text.