US 2002/0157608 A1 · Performance evaluation method for plasma processing apparatus

Abstract

A plasma processing apparatus has a plasma processing chamber having a plasma excitation electrode, a radiofrequency generator connected to the plasma excitation electrode, and a matching circuit for matching the impedance between the plasma processing chamber and the radiofrequency generator. The loss capacitance CX1 at a later time t1 after delivery is measured between the plasma excitation electrode and ground potential positions which are grounded. The performance is evaluated by whether or not the loss capacitance CX1 is less than 26 times the plasma electrode capacitance Ce1 at the later time t1 between the plasma excitation electrode and a counter electrode which cooperate with each other.

Claims57

Dependent claims

A performance evaluation method for a plasma processing apparatus, the plasma processing apparatus comprising:

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the method comprising:
calculating the absolute value of the difference ΔCX between a loss capacitance CX0 at a time t0 and a loss capacitance CX1 at a later time t1 of the plasma processing chamber, the loss capacitances CX0 and CX1 being measured between the plasma excitation electrode and ground potential positions which are DC-grounded;
and
determining that the plasma processing apparatus maintains a required level of performance when the absolute value is less than an upper limit and that the plasma processing apparatus does not maintain the required level of performance when the absolute value is not less than the upper limit.

4 more elements

A performance management system for at least one plasma processing apparatus, the plasma processing apparatus comprising:

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the performance management system comprising:
a server for storing a loss capacitance CX0 at a time t0 between the plasma excitation electrode and ground potential positions which are DC-grounded;
and
a customer I/O device linked to the server via a communication line,
wherein the server receives a loss capacitance CX1 at a later time t1 between the plasma excitation electrode and the ground potential positions from the customer I/O device, calculates the absolute value of the difference ΔCX between the loss capacitance CX0 and loss capacitance CX1, and transmits a signal indicating that a required level of performance is maintained when the absolute value is less than an upper limit and a signal indicating that the required level of performance is not maintained when the absolute value is not less than the upper limit to the customer I/O device.

5 more elements

A performance management system for at least one plasma processing apparatus, the plasma processing apparatus comprising:

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the performance management system comprising:
a server for storing a loss capacitance CX0 at a time t0 between the plasma excitation electrode and ground potential positions which are DC-grounded and service engineer information according to fault levels each having a predetermined range;
an output device for the server, the output device being located at a delivery site;
and
a customer I/O device linked to the server via a communication line,
wherein the server receives a loss capacitance CX1 at a later time t1 between the plasma excitation electrode and the ground potential positions from the customer I/O device, calculates the absolute value of the difference ΔCX between the loss capacitance CX0 and the loss capacitance CX1, and outputs a fault level, service engineer information corresponding to the fault level, and a maintenance command corresponding to the fault level, when the absolute value falls within the fault level with the predetermined range.

6 more elements

A plasma processing apparatus comprising:

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator,
wherein the absolute value of the difference ΔCX between a loss capacitance CX0 at a time t0 and a loss capacitance CX1 at a later time t1 is maintained to be less than an upper limit wherein the loss capacitances CX0 and CX1 are measured between the plasma excitation electrode and ground potential positions which are DC-grounded.

2 more elements

A performance evaluation method for a plasma processing apparatus which is disassembled before transfer, is transported to a customer, and is reassembled at a customer site, the plasma processing apparatus comprising:

a plurality of plasma processing chambers including plasma excitation electrodes for exciting plasma;
radiofrequency feeders, each plasma excitation electrode being connected to the output end of the corresponding radiofrequency feeder;
at least one radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrodes;
and at least one matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chambers and the radiofrequency generator, the method comprising:
determining that the plasma processing apparatus maintains a required level of performance when a variation Ce1r, defined by (Ce1max−Ce1min)/(Ce1max+Ce1min), between the maximum capacitance Ce1max and the minimum capacitance Ce1min among plasma electrode capacitances Ce1 of the plurality of plasma processing chambers is less than an upper limit and that the plasma processing apparatus does not maintain the required level of performance when the variation is not less than the upper limit, wherein the plasma electrode capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other;
and
determining that the plasma processing apparatus maintains a required level of performance when a variation CX1r, defined by (CX1max−CX1min)/(CX1max+CX1min), between the maximum capacitance CX1max and the minimum capacitance CX1min among loss capacitances CX1 of the plurality of plasma processing chambers is less than an upper limit and that the plasma processing apparatus does not maintain the required level of performance when the variation is not less than the upper limit, wherein the loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded.

4 more elements

a plurality of plasma processing chambers including plasma excitation electrodes for exciting plasma;
radiofrequency feeders, each plasma excitation electrode being connected to the output end of the corresponding radiofrequency feeder;
at least one radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrodes;
and at least one matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chambers and the radiofrequency generator, the method comprising:
determining that the plasma processing apparatus maintains a required level of performance when a variation Ce1r, defined by (Ce1max−Ce1min)/(Ce1max+Ce1min), between the maximum capacitance Ce1max and the minimum capacitance Ce1min among plasma electrode capacitances Ce1 of the plurality of plasma processing chambers is less than an upper limit and that the plasma processing apparatus does not maintain the required level of performance when the variation is not less than the upper limit, wherein the plasma electrode capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other;
and
determining that the plasma processing apparatus maintains a required level of performance when a variation CX1r, defined by (CX1max−CX1min)/(CX1max+CX1min), between the maximum capacitance CX1max and the minimum capacitance CX1min among loss capacitances CX1 of the plurality of plasma processing chambers is less than an upper limit and when all the loss capacitances CX1 are less than 26 times the plasma electrode capacitance Ce1 and that the plasma processing apparatus does not maintain the required level of performance when the variation is not less than the upper limit or when one of the loss capacitances CX1 is not less than 26 times the plasma electrode capacitance Ce1, wherein the loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded.

4 more elements

A performance evaluation method for a plasma processing system which is disassembled before transfer, is transported to a customer, and is reassembled at a customer site, the plasma processing system comprising a plurality of plasma processing apparatuses, each comprising:

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the method comprising:
determining that the plasma processing system maintains a required level of performance when a variation Ce1r, defined by (Ce1max−Ce1min)/(Ce1max+Ce1min), between the maximum capacitance Ce1max and the minimum capacitance Ce1min among plasma electrode capacitances Ce1 of the plurality of plasma processing apparatuses is less than an upper limit and that the plasma processing system does not maintain the required level of performance when the variation is not less than the upper limit, wherein the plasma electrode capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other;
and
determining that the plasma processing system maintains a required level of performance when a variation CX1r, defined by (CX1max−CX1min)/(CX1max+CX1min), between the maximum capacitance CX1max and the minimum capacitance CX1min among loss capacitances CX1 of the plurality of plasma processing apparatuses is less than an upper limit and that the plasma processing system does not maintain the required level of performance when the variation is not less than the upper limit, wherein the loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded.

4 more elements

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the method comprising:
determining that the plasma processing system maintains a required level of performance when a variation Ce1r, defined by (Ce1max−Ce1min)/(Ce1max+Ce1min), between the maximum capacitance Ce1max and the minimum capacitance Ce1min among plasma electrode capacitances Ce1 of the plurality of plasma processing apparatuses is less than an upper limit and that the plasma processing system does not maintain the required level of performance when the variation is not less than the upper limit, wherein the plasma electrode capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other;
and
determining that the plasma processing apparatus maintains a required level of performance when a variation CX1r, defined by (CX1max−CX1min)/(CX1max+CX1min), between the maximum capacitance CX1max and the minimum capacitance CX1min among loss capacitances CX1 of the plurality of plasma processing chambers is less than an upper limit and when all the loss capacitances CX1 are less than 26 times the plasma electrode capacitance Ce1 and that the plasma processing apparatus does not maintain the required level of performance when the variation is not less than the upper limit or when one of the loss capacitances CX1 is not less than 26 times the plasma electrode capacitance Ce1, wherein the loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded.

4 more elements

A performance management system for a plasma processing apparatus which is disassembled before transfer, is transported to a customer, and is reassembled at a customer site, the plasma processing apparatus comprising:

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the performance management system comprising:
a server;
and
a customer I/O device linked to the server via a communication line,
wherein the server receives a loss capacitance CX1 and a plasma electrode capacitance Ce1 after the delivery from the customer I/O device and transmits a signal indicating that a required level of performance is maintained when the loss capacitance CX1 is less than 26 times the plasma electrode capacitance Ce1 and a signal indicating that the required level of performance is not maintained when the loss capacitance CX1 is not less than 26 times the plasma electrode capacitance Ce1 to the customer I/O device, wherein the loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded and the plasma electrode capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other.

5 more elements

a plurality of plasma processing chambers including plasma excitation electrodes for exciting plasma;
radiofrequency feeders, each plasma excitation electrode being connected to the output end of the corresponding radiofrequency feeder;
at least one radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrodes;
and at least one matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chambers and the radiofrequency generator, the system comprising:
a server;
and
a customer I/O device linked to the server via a communication line,
wherein the server receives a loss capacitance CX1 and a plasma electrode capacitance Ce1 after the delivery of each plasma processing chamber from the customer I/O device and transmits a signal indicating that a required level of performance is maintained when the loss capacitance CX1 is less than 26 times the plasma electrode capacitance Ce1 and a signal indicating that the required level of performance is not maintained when the loss capacitance CX1 is not less than 26 times the plasma electrode capacitance Ce1 to the customer I/O device, wherein the loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded and the plasma electrode capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other.

5 more elements

a plurality of plasma processing chambers including plasma excitation electrodes for exciting plasma;
radiofrequency feeders, each plasma excitation electrode being connected to the output end of the corresponding radiofrequency feeder;
at least one radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrodes;
and at least one matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chambers and the radiofrequency generator, the system comprising:
a server comprising an output device;
and
a customer I/O device linked to the server via a communication line,
wherein the server receives data of identification numbers and plasma electrode capacitances Ce1 of the plasma processing chambers after the delivery from the customer I/O device, and outputs the identification numbers and a maintenance command through the output device when a variation Ce1r, defined by (Ce1max−Ce1min)/(Ce1max+Ce1min), between the maximum capacitance Ce1max and the minimum capacitance Ce1min among capacitances Ce1 is not less than an upper limit, wherein each capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other, and
wherein the server receives data of identification numbers and loss capacitances CX1 of the plasma processing chambers after the delivery from the customer I/O device, and outputs the identification numbers and a maintenance command through the output device when a variation CX1r, defined by (CX1max−CX1min)/(CX1max+CX1min), between the maximum capacitance CX1max and the minimum capacitance CX1min among loss capacitances CX1 is not less than an upper limit, wherein each loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded.

6 more elements

A performance management system for a plasma processing system which is disassembled before transfer, is transported to a customer, and is reassembled at a customer site, the plasma processing system comprising a plurality of plasma processing apparatuses, each comprising:

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the performance management system comprising:
a server;
and
a customer I/O device linked to the server via a communication line,
wherein the server receives a loss capacitance CX1 and a plasma electrode capacitance Ce1 after the delivery from the customer I/O device and transmits a signal indicating that a required level of performance is maintained when the loss capacitance CX1 is less than 26 times the plasma electrode capacitance Ce1 and a signal indicating that the required level of performance is not maintained when the loss capacitance CX1 is not less than 26 times the plasma electrode capacitance Ce1 to the customer I/O device, wherein the loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded and the plasma electrode capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other.

5 more elements

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the performance management system comprising:
a server;
and
a customer I/O device linked to the server via a communication line,
wherein the server receives data of identification numbers and plasma electrode capacitances Ce1, of the plasma processing chambers after the delivery from the customer I/O device, and outputs the identification numbers and a maintenance command through the output device when a variation Ce1r, defined by (Ce1max−Ce1min)/(Ce1max+Ce1min), between the maximum capacitance Ce1max and the minimum capacitance Ce1min among capacitances Ce1 is not less than an upper limit, wherein each capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other;
and
wherein the server receives data of identification numbers and loss capacitances CX1 of the plasma processing chambers after the delivery from the customer I/O device, and outputs the identification numbers and a maintenance command through the output device when a variation CX1r, defined by (CX1max−CX1min)/(CX1max+CX1min), between the maximum capacitance CX1max and the minimum capacitance CX1min among loss capacitances CX1 is not less than an upper limit, wherein each loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application

10/033,443Filed 2 Nov 2001

Priority

JP 2000-3382466 Nov 2000

Published

31 Oct 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H01J 37/32174
Radio frequency generated discharge: circuits specially adapted for controlling the RF discharge
C23C 16/52
Characterised by the method of coating: controlling or regulating the coating process
H01J 37/32935
Plasma diagnostics: monitoring and controlling tubes by information coming from the object and/or discharge
H01J 37/3299
Plasma diagnostics: feedback systems

Abstract

Claims57

Dependent claims

A performance evaluation method for a plasma processing apparatus, the plasma processing apparatus comprising:

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the method comprising:
calculating the absolute value of the difference ΔCX between a loss capacitance CX0 at a time t0 and a loss capacitance CX1 at a later time t1 of the plasma processing chamber, the loss capacitances CX0 and CX1 being measured between the plasma excitation electrode and ground potential positions which are DC-grounded;
and
determining that the plasma processing apparatus maintains a required level of performance when the absolute value is less than an upper limit and that the plasma processing apparatus does not maintain the required level of performance when the absolute value is not less than the upper limit.

4 more elements

A performance management system for at least one plasma processing apparatus, the plasma processing apparatus comprising:

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the performance management system comprising:
a server for storing a loss capacitance CX0 at a time t0 between the plasma excitation electrode and ground potential positions which are DC-grounded;
and
a customer I/O device linked to the server via a communication line,
wherein the server receives a loss capacitance CX1 at a later time t1 between the plasma excitation electrode and the ground potential positions from the customer I/O device, calculates the absolute value of the difference ΔCX between the loss capacitance CX0 and loss capacitance CX1, and transmits a signal indicating that a required level of performance is maintained when the absolute value is less than an upper limit and a signal indicating that the required level of performance is not maintained when the absolute value is not less than the upper limit to the customer I/O device.

5 more elements

A performance management system for at least one plasma processing apparatus, the plasma processing apparatus comprising:

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the performance management system comprising:
a server for storing a loss capacitance CX0 at a time t0 between the plasma excitation electrode and ground potential positions which are DC-grounded and service engineer information according to fault levels each having a predetermined range;
an output device for the server, the output device being located at a delivery site;
and
a customer I/O device linked to the server via a communication line,
wherein the server receives a loss capacitance CX1 at a later time t1 between the plasma excitation electrode and the ground potential positions from the customer I/O device, calculates the absolute value of the difference ΔCX between the loss capacitance CX0 and the loss capacitance CX1, and outputs a fault level, service engineer information corresponding to the fault level, and a maintenance command corresponding to the fault level, when the absolute value falls within the fault level with the predetermined range.

6 more elements

A plasma processing apparatus comprising:

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator,
wherein the absolute value of the difference ΔCX between a loss capacitance CX0 at a time t0 and a loss capacitance CX1 at a later time t1 is maintained to be less than an upper limit wherein the loss capacitances CX0 and CX1 are measured between the plasma excitation electrode and ground potential positions which are DC-grounded.

2 more elements

a plurality of plasma processing chambers including plasma excitation electrodes for exciting plasma;
radiofrequency feeders, each plasma excitation electrode being connected to the output end of the corresponding radiofrequency feeder;
at least one radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrodes;
and at least one matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chambers and the radiofrequency generator, the method comprising:
determining that the plasma processing apparatus maintains a required level of performance when a variation Ce1r, defined by (Ce1max−Ce1min)/(Ce1max+Ce1min), between the maximum capacitance Ce1max and the minimum capacitance Ce1min among plasma electrode capacitances Ce1 of the plurality of plasma processing chambers is less than an upper limit and that the plasma processing apparatus does not maintain the required level of performance when the variation is not less than the upper limit, wherein the plasma electrode capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other;
and
determining that the plasma processing apparatus maintains a required level of performance when a variation CX1r, defined by (CX1max−CX1min)/(CX1max+CX1min), between the maximum capacitance CX1max and the minimum capacitance CX1min among loss capacitances CX1 of the plurality of plasma processing chambers is less than an upper limit and that the plasma processing apparatus does not maintain the required level of performance when the variation is not less than the upper limit, wherein the loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded.

4 more elements

a plurality of plasma processing chambers including plasma excitation electrodes for exciting plasma;
radiofrequency feeders, each plasma excitation electrode being connected to the output end of the corresponding radiofrequency feeder;
at least one radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrodes;
and at least one matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chambers and the radiofrequency generator, the method comprising:
determining that the plasma processing apparatus maintains a required level of performance when a variation Ce1r, defined by (Ce1max−Ce1min)/(Ce1max+Ce1min), between the maximum capacitance Ce1max and the minimum capacitance Ce1min among plasma electrode capacitances Ce1 of the plurality of plasma processing chambers is less than an upper limit and that the plasma processing apparatus does not maintain the required level of performance when the variation is not less than the upper limit, wherein the plasma electrode capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other;
and
determining that the plasma processing apparatus maintains a required level of performance when a variation CX1r, defined by (CX1max−CX1min)/(CX1max+CX1min), between the maximum capacitance CX1max and the minimum capacitance CX1min among loss capacitances CX1 of the plurality of plasma processing chambers is less than an upper limit and when all the loss capacitances CX1 are less than 26 times the plasma electrode capacitance Ce1 and that the plasma processing apparatus does not maintain the required level of performance when the variation is not less than the upper limit or when one of the loss capacitances CX1 is not less than 26 times the plasma electrode capacitance Ce1, wherein the loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded.

4 more elements

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the method comprising:
determining that the plasma processing system maintains a required level of performance when a variation Ce1r, defined by (Ce1max−Ce1min)/(Ce1max+Ce1min), between the maximum capacitance Ce1max and the minimum capacitance Ce1min among plasma electrode capacitances Ce1 of the plurality of plasma processing apparatuses is less than an upper limit and that the plasma processing system does not maintain the required level of performance when the variation is not less than the upper limit, wherein the plasma electrode capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other;
and
determining that the plasma processing system maintains a required level of performance when a variation CX1r, defined by (CX1max−CX1min)/(CX1max+CX1min), between the maximum capacitance CX1max and the minimum capacitance CX1min among loss capacitances CX1 of the plurality of plasma processing apparatuses is less than an upper limit and that the plasma processing system does not maintain the required level of performance when the variation is not less than the upper limit, wherein the loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded.

4 more elements

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the method comprising:
determining that the plasma processing system maintains a required level of performance when a variation Ce1r, defined by (Ce1max−Ce1min)/(Ce1max+Ce1min), between the maximum capacitance Ce1max and the minimum capacitance Ce1min among plasma electrode capacitances Ce1 of the plurality of plasma processing apparatuses is less than an upper limit and that the plasma processing system does not maintain the required level of performance when the variation is not less than the upper limit, wherein the plasma electrode capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other;
and
determining that the plasma processing apparatus maintains a required level of performance when a variation CX1r, defined by (CX1max−CX1min)/(CX1max+CX1min), between the maximum capacitance CX1max and the minimum capacitance CX1min among loss capacitances CX1 of the plurality of plasma processing chambers is less than an upper limit and when all the loss capacitances CX1 are less than 26 times the plasma electrode capacitance Ce1 and that the plasma processing apparatus does not maintain the required level of performance when the variation is not less than the upper limit or when one of the loss capacitances CX1 is not less than 26 times the plasma electrode capacitance Ce1, wherein the loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded.

4 more elements

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the performance management system comprising:
a server;
and
a customer I/O device linked to the server via a communication line,
wherein the server receives a loss capacitance CX1 and a plasma electrode capacitance Ce1 after the delivery from the customer I/O device and transmits a signal indicating that a required level of performance is maintained when the loss capacitance CX1 is less than 26 times the plasma electrode capacitance Ce1 and a signal indicating that the required level of performance is not maintained when the loss capacitance CX1 is not less than 26 times the plasma electrode capacitance Ce1 to the customer I/O device, wherein the loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded and the plasma electrode capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other.

5 more elements

a plurality of plasma processing chambers including plasma excitation electrodes for exciting plasma;
radiofrequency feeders, each plasma excitation electrode being connected to the output end of the corresponding radiofrequency feeder;
at least one radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrodes;
and at least one matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chambers and the radiofrequency generator, the system comprising:
a server;
and
a customer I/O device linked to the server via a communication line,
wherein the server receives a loss capacitance CX1 and a plasma electrode capacitance Ce1 after the delivery of each plasma processing chamber from the customer I/O device and transmits a signal indicating that a required level of performance is maintained when the loss capacitance CX1 is less than 26 times the plasma electrode capacitance Ce1 and a signal indicating that the required level of performance is not maintained when the loss capacitance CX1 is not less than 26 times the plasma electrode capacitance Ce1 to the customer I/O device, wherein the loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded and the plasma electrode capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other.

5 more elements

a plurality of plasma processing chambers including plasma excitation electrodes for exciting plasma;
radiofrequency feeders, each plasma excitation electrode being connected to the output end of the corresponding radiofrequency feeder;
at least one radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrodes;
and at least one matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chambers and the radiofrequency generator, the system comprising:
a server comprising an output device;
and
a customer I/O device linked to the server via a communication line,
wherein the server receives data of identification numbers and plasma electrode capacitances Ce1 of the plasma processing chambers after the delivery from the customer I/O device, and outputs the identification numbers and a maintenance command through the output device when a variation Ce1r, defined by (Ce1max−Ce1min)/(Ce1max+Ce1min), between the maximum capacitance Ce1max and the minimum capacitance Ce1min among capacitances Ce1 is not less than an upper limit, wherein each capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other, and
wherein the server receives data of identification numbers and loss capacitances CX1 of the plasma processing chambers after the delivery from the customer I/O device, and outputs the identification numbers and a maintenance command through the output device when a variation CX1r, defined by (CX1max−CX1min)/(CX1max+CX1min), between the maximum capacitance CX1max and the minimum capacitance CX1min among loss capacitances CX1 is not less than an upper limit, wherein each loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded.

6 more elements

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the performance management system comprising:
a server;
and
a customer I/O device linked to the server via a communication line,
wherein the server receives a loss capacitance CX1 and a plasma electrode capacitance Ce1 after the delivery from the customer I/O device and transmits a signal indicating that a required level of performance is maintained when the loss capacitance CX1 is less than 26 times the plasma electrode capacitance Ce1 and a signal indicating that the required level of performance is not maintained when the loss capacitance CX1 is not less than 26 times the plasma electrode capacitance Ce1 to the customer I/O device, wherein the loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded and the plasma electrode capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other.

5 more elements

a plasma processing chamber including a plasma excitation electrode for exciting a plasma;
a radiofrequency feeder, the plasma excitation electrode being connected to the output end of the radiofrequency feeder;
a radiofrequency generator for supplying a radiofrequency voltage to the plasma excitation electrode;
and a matching circuit having an input terminal and an output terminal, the input terminal being connected to the radiofrequency generator and the output terminal being connected to the input end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator, the performance management system comprising:
a server;
and
a customer I/O device linked to the server via a communication line,
wherein the server receives data of identification numbers and plasma electrode capacitances Ce1, of the plasma processing chambers after the delivery from the customer I/O device, and outputs the identification numbers and a maintenance command through the output device when a variation Ce1r, defined by (Ce1max−Ce1min)/(Ce1max+Ce1min), between the maximum capacitance Ce1max and the minimum capacitance Ce1min among capacitances Ce1 is not less than an upper limit, wherein each capacitance Ce1 is measured between the plasma excitation electrode and a counter electrode which generate a plasma in cooperation with each other;
and
wherein the server receives data of identification numbers and loss capacitances CX1 of the plasma processing chambers after the delivery from the customer I/O device, and outputs the identification numbers and a maintenance command through the output device when a variation CX1r, defined by (CX1max−CX1min)/(CX1max+CX1min), between the maximum capacitance CX1max and the minimum capacitance CX1min among loss capacitances CX1 is not less than an upper limit, wherein each loss capacitance CX1 is measured between the plasma excitation electrode and ground potential positions which are DC-grounded.

7 more elements

Dependencies are inferred from the claim text.

Performance evaluation method for plasma processing apparatus

Life of this patent

Abstract

Claims57

Performance evaluation method for plasma processing apparatus

Life of this patent

Abstract

Claims57