High density non-volatile memory device
AssigneeThe Regents of the University of California Office of Technology Transfer
InventorsDavid F. Bocian, Werner G. Kuhr, Jonathan Lindsey
Life of this patent
Estimating the term…
Loading patent…
AssigneeThe Regents of the University of California Office of Technology Transfer
InventorsDavid F. Bocian, Werner G. Kuhr, Jonathan Lindsey
Estimating the term…
This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.
An apparatus for storing data, said apparatus comprising:
An information storage medium, said storage medium comprising a one or more storage molecules such that said storage medium has at least two different and distinguishable non-neutral oxidation states.
A collection of molecules for the production of a data storage medium, said collection comprising a plurality storage molecules wherein each species of storage molecule has an oxidation state different from and distinguishable from the oxidation states of the other species of storage molecules comprising said collection.
A molecule for the storage of information, said molecule having the formula:
A molecule for the storage of information, said molecule having the formula:
A molecule for the storage of information, said molecule having the formula:
A molecule for the storage of information, said molecule having the formula:
Dependencies are inferred from the claim text.