Window for light-emitting diode
AssigneeAXT, Inc.
InventorsJohn Chen, Bingwen Liang, Robert Shih
Life of this patent
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Abstract
A Light Emitting Diode (LED) constructed of AlGaInP compounds includes a multi layer window which improves the efficiency of the diode. The window, in the order of formation, includes a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indium Tin Oxide (ITO), and a titanium\gold contact. In one embodiment, the contact forms ohmic connections with the second and third layers; and a Shottky diode connection with first layer. In a second embodiment, the contact forms an ohmic connection with the third layer; and is insulated from direct contact with the first layer.
Claims8
1) An AlGaInP semiconductor light-emitting diode (LED) assembly comprising:
- a substrate;
- a first input terminal electrically coupled to said substrate;
- a plurality of layers formed on said substrate to form a light-emitting structure;
- a window structure formed on said light-emitting structure;
- and
- a second input terminal;
- wherein:
- said window structure comprises:
- a first layer comprised of lightly doped p semi conductor material other than AlGaInP;
- a low resistance second layer formed on said first window layer and comprised of p doped semi conductor material other than AlGaInP and different from the material of said first layer;
- a third layer formed on said second layer and comprised of an amorphous conductive material;
- and
- said second input terminal comprises a metal contact which passes through an opening in said second and third;
- forms ohmic connections with said layers;
- and forms a Shottky diode contnection with said first layer.
3) An AlGaInP semiconductor light-emitting diode (LED) assembly comprising:
- a substrate;
- a first input terminal electrically coupled to said substrate;
- a plurality of layers formed on said substrate to form a light-emitting structure;
- a window formed on said light-emitting structure;
- and
- a second input terminal;
- wherein:
- said window comprises:
- a first layer comprised of lightly doped p semi conductor material other than AlGaInP;
- a low resistance second layer formed on said first layer and comprised of p doped semi conductor material other than AlGaInP and different from the material of said first layer;
- a third layer formed on said second layer and comprised of an amorphous conductive material;
- an insulator formed on said first layer in a void etched in said second layer;
- and
- said second input terminal comprises a metal contact which passes through an opening in said third layer to said insulator;
- and forms an ohmic connection with said third layer.
5) A transparent window for an AlGaInP semiconductor light-emitting diode (LED) assembly comprising:
- a first layer comprised of lightly doped p semi conductor material other than AlGaInP;
- a low resistance second layer formed on said first layer and comprised of p doped semi conductor material other than AlGaInP and different from the material of said first layer;
- a third layer formed on said second layer and comprised of an amorphous conductive material;
- and
- a metal contact which passes through an opening in said second and third layers to said first layer to form ohmic connections with said second and third layers and a Shottky diode connection with said first layer.
7) A transparent window for an AlGaInP semiconductor light-emitting diode (LED) assembly comprising:
- a first layer comprised of lightly doped p semi conductor material other than AlGaInP;
- a low resistance second layer formed on said first layer and comprised of p doped semi conductor material other than AlGaInP and different from the material of said first layer;
- a third layer formed on said second layer and comprised of an amorphous conductive material;
- an insulator formed on said first layer in a void etched in said second layer;
- and
- a metal contact which passes through an opening in said third window layer to said insulator;
- and forms an ohmic connection with said third layer.
Dependencies are inferred from the claim text.