Press - contact type semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsEitaro Miyake, Yoshiki Endo, Ichiro Omura, Tomokazu Domon
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AssigneeKabushiki Kaisha Toshiba
InventorsEitaro Miyake, Yoshiki Endo, Ichiro Omura, Tomokazu Domon
Estimating the term…
A press-contact type semiconductor device comprises: a plurality of semiconductor elements each of which has a first main electrode and a control electrode and a second main electrode; a second common main power source plate having the semiconductor elements positioned on a front surface thereof and electrically connected to the second main electrodes; a first common main power source plate arranged on the front surfaces of the semiconductor elements and electrically connected to the first main electrodes; a common control signal/main current plate arranged between semiconductor elements and including at least control signal wiring layers and main current wiring layers; conductive connectors for electrically connecting at least the main current wiring layers and the first common maim power source plate; and conductive elastic members for electrically connecting the main current wiring layers or the first common main power source plate to the conductive connectors by elasticity.
A press-contact type semiconductor device comprising:
Dependencies are inferred from the claim text.