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AssigneeRenesas Technology Corp.
InventorsShunji Maeda, Yasuhiko Nakayama, Minoru Yoshida, Hitoshi Kubota, Kenji Oka
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A pattern detection method and apparatus thereof for inspecting with high resolution a micro fine defect of a pattern on an inspected object and a semiconductor substrate manufacturing method and system for manufacturing semiconductor substrates such as semiconductor wafers with a high yield. A micro fine pattern on the inspected object is inspected by irradiating an annular-looped illumination through an objective lens onto a wafer mounted on a stage, the wafer having micro fine patterns thereon. The illumination light may be circularly or elliptically polarized and controlled according to an image detected on the pupil of the objective lens and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect so that simultaneously, a micro fine defect or defects on the micro fine pattern are detected with high resolution. Further, process conditions of a manufacturing line are controlled by analyzing a cause of defect and a factor of defect which occurs on the pattern.
A method for detecting information relating to a pattern on an object to be inspected comprising the steps of:
A pattern detection apparatus for detecting a pattern on an object to be inspected, comprising:
A pattern detection apparatus according the claim 25, further comprising comparison means for comparing the converted image signals of the pattern with image signals of a reference pattern;
A pattern defect inspection apparatus for detecting a defect of a pattern on an object to be inspected comprising:
Dependencies are inferred from the claim text.