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US 2002/0153938 A1Published application
Hybrid power MOSFET
AssigneeSiemens Aktiengesellschaft
InventorsEric Baudelot, Manfred Bruckmann, Heinz Mitlehner, Dietrich Stephani, Benno Weis
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Abstract
A hybrid power MOSFET, comprising a MOSFET and a junction FET, the MOSFET and the junction FET being electrically connected in series is disclosed. In accordance with the present invention, the hybrid power MOSFET is provided with a device for reducing the change in the gate voltage of the junction FET. Thus, a hybrid power MOSFET is obtained in which high over-voltages no longer arise and whose EMC response is much improved.
Claims15
A hybrid power MOSFET, said hybrid power MOSFET comprising:
- a MOSFET;
- a junction FET, said MOSFET and said junction FET being electrically connected in series, and
- a device for reducing the change in the gate voltage of said junction FET.
Dependencies are inferred from the claim text.