Light-emitting apparatus and method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMasayuki Sakakura, Shunpei Yamazaki
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Abstract
A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of one kind or a plurality of kinds selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; an organic compound layer formed on the second insulating layer; and a second electrode formed on the organic compound layer.
Claims88
A light-emitting device comprising an insulating layer provided between an organic compound layer and an electrode positioned below the organic compound layer,
- wherein the insulating layer allows a tunnel current or a Fowler-Nordheim current to flow therethrough to supply a current to the organic compound layer, and prevents moisture from diffusing to the organic compound layer,
- wherein the insulating layer comprises at least one selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride, and has a thickness of 1 to 10 nm.
A light-emitting device comprising:
- a first electrode formed on an insulating surface;
- a first insulating layer covering an end portion of the first electrode and comprising a tapered edge;
- a second insulating layer formed on the first electrode and the first insulating layer;
- an organic compound layer formed on the second insulating layer;
- and
- a second electrode formed on the organic compound layer,
- wherein the first electrode and the organic compound layer are connected to each other through a tunnel junction.
A light-emitting device comprising:
- a first electrode formed on an insulating surface;
- a first insulating layer covering an end portion of the first electrode and comprising a tapered edge;
- a second insulating layer formed on the first electrode and the first insulating layer;
- an organic compound layer formed on the second insulating layer;
- and
- a second electrode formed on the organic compound layer,
- wherein the second insulating layer has a thickness that allows the first electrode and the organic compound layer to form a tunnel junction.
A light-emitting device comprising:
- a first electrode formed on an insulating surface;
- a first insulating layer covering an end portion of the first electrode and comprising a tapered edge;
- a second insulating layer formed on the first electrode and the first insulating layer;
- an organic compound layer formed on the second insulating layer;
- and
- a second electrode formed on the organic compound layer,
- wherein the second insulating layer has a thickness that allows the tunnel current or the Fowler-Nordheim current to flow therethrough.
A light-emitting device comprising:
- a thin film transistor comprising a source region and a drain region;
- an interlayer insulating film over the source region and the drain region;
- a drain electrode connected to the drain region through an opening formed in the interlayer insulating film;
- a first electrode formed on the interlayer insulating film so as to be connected to the drain electrode;
- a first insulating layer comprising an opening on the first electrode, covering an end portion of the first electrode, and comprising a tapered edge;
- a second insulating layer formed on the first electrode and the first insulating layer;
- an organic compound layer formed on the second insulating layer;
- and
- a second electrode formed on the organic compound layer,
- wherein the first electrode and the organic compound layer are connected to each other through a tunnel junction.
A light-emitting device comprising:
- a thin film transistor comprising a source region and a drain region;
- an interlayer insulating film over the source region and the drain region;
- a drain electrode connected to the drain region through an opening formed in the interlayer insulating film;
- a first electrode formed on the interlayer insulating film so as to be connected to the drain electrode;
- a first insulating layer comprising an opening on the first electrode, covering an end portion of the first electrode, and comprising a tapered edge;
- a second insulating layer formed on the first electrode and the first insulating layer;
- an organic compound layer formed on the second insulating layer;
- and
- a second electrode formed on the organic compound layer,
- wherein the second insulating layer has a thickness that allows the first electrode and the organic compound layer to form a tunnel junction.
A light-emitting device comprising:
- a thin film transistor comprising a source region and a drain region;
- an interlayer insulating film over the source region and the drain region;
- a drain electrode connected to the drain region through an opening formed in the interlayer insulating film;
- a first electrode formed on the interlayer insulating film so as to be connected to the drain electrode;
- a first insulating layer comprising an opening on the first electrode, covering an end portion of the first electrode, and comprising a tapered edge;
- a second insulating layer formed on the first electrode and the first insulating layer;
- an organic compound layer formed on the second insulating layer;
- and
- a second electrode formed on the organic compound layer,
- wherein the second insulating layer has a thickness that allows the tunnel current or the Fowler-Nordheim current to flow therethrough.
A method of manufacturing a light-emitting apparatus, comprising the steps of:
- forming a first electrode on an insulating surface;
- forming a first insulating layer covering an end portion of the first electrode and comprising a tapered edge;
- forming a second insulating layer on the first electrode and the first insulating layer;
- forming an organic compound layer on the second insulating layer;
- and
- forming a second electrode on the organic compound layer,
- wherein the first electrode and the organic compound layer are connected to each other through a tunnel junction.
A method of manufacturing a light-emitting apparatus, comprising the steps of:
- forming a first electrode on an insulating surface;
- forming a first insulating layer covering an end portion of the first electrode and comprising a tapered edge;
- forming a second insulating layer on the first electrode and the first insulating layer;
- forming an organic compound layer on the second insulating layer;
- and
- forming a second electrode on the organic compound layer,
- wherein the second insulating layer has a thickness that allows the first electrode and the organic compound layer to form a tunnel junction.
A method of manufacturing a light-emitting apparatus, comprising the steps of:
- forming a first electrode on an insulating surface;
- forming a first insulating layer covering an end portion of the first electrode and comprising a tapered edge;
- forming a second insulating layer on the first electrode and the first insulating layer;
- forming an organic compound layer on the second insulating layer;
- and
- forming a second electrode on the organic compound layer,
- wherein the second insulating layer has a thickness that allows the tunnel current or the Fowler-Nordheim current to flow therethrough.
A method of manufacturing a light-emitting device, comprising the steps of:
- forming an interlayer insulating film over a source region and a drain region of a thin film transistor;
- forming an opening reaching the drain region in the interlayer insulating film;
- forming a drain electrode;
- forming a first electrode connected to the drain electrode on the interlayer insulating film;
- forming an insulating layer that covers the first electrode connected to the drain electrode;
- forming an opening in the insulating layer on the first electrode to provide a first insulating layer;
- forming a second insulating layer on the first electrode and the first insulating layer;
- forming an organic compound layer on the second insulating layer;
- and
- forming a second electrode on the organic compound layer,
- wherein the first electrode and the organic compound layer are connected to each other through a tunnel junction.
A method of manufacturing a light-emitting device, comprising the steps of:
- forming an interlayer insulating film over a source region and a drain region of a thin film transistor;
- forming an opening reaching the drain region in the interlayer insulating film;
- forming a drain electrode;
- forming a first electrode connected to the drain electrode on the interlayer insulating film;
- forming an insulating layer that covers the first electrode connected to the drain electrode;
- forming an opening in the insulating layer on the first electrode to provide a first insulating layer;
- forming a second insulating layer on the first electrode and the first insulating layer;
- forming an organic compound layer on the second insulating layer;
- and
- forming a second electrode on the organic compound layer,
- wherein the second insulating layer has a thickness that allows the first electrode and the organic compound layer to form a tunnel junction.
A method of manufacturing a light-emitting device, comprising the steps of:
- forming an interlayer insulating film over a source region and a drain region of a thin film transistor;
- forming an opening reaching the drain region in the interlayer insulating film;
- forming a drain electrode;
- forming a first electrode connected to the drain electrode on the interlayer insulating film;
- forming an insulating layer that covers the first electrode connected to the drain electrode;
- forming an opening in the insulating layer on the first electrode to provide a first insulating layer;
- forming a second insulating layer on the first electrode and the first insulating layer;
- forming an organic compound layer on the second insulating layer;
- and
- forming a second electrode on the organic compound layer,
- wherein the second insulating layer has a thickness that allows the tunnel current or the Fowler-Nordheim current to flow therethrough.
Dependencies are inferred from the claim text.