Electron-emitting device and production method thereof
OwnerMasato Yamanobe, Takeo Tsukamoto +1inventors
InventorsMasato Yamanobe, Takeo Tsukamoto, Shinichi Kawate
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Abstract
An electron-emitting device disclosed has stable electron emission characteristics with little variation, in high electron emission efficiency, in high definition, and at low driving voltage. The electron-emitting device disclosed is constructed in such structure that on a substrate there are a lower electrode, an insulating layer having pores, and an upper electrode stacked in this order, the insulating layer is an anodic oxide layer, and a carbon deposit is formed in the pores.
Claims79
An electron-emitting device comprising a lower electrode, an insulating layer having a pore, and an upper electrode stacked in this order on a substrate,
- wherein a carbon deposit is provided in said pore, and a small gap is provided between said upper electrode and said carbon deposit.
An electron-emitting device comprising a lower electrode, an insulating layer having a pore, and an upper electrode stacked in this order on a substrate,
- wherein an electron-emitting region is provided in said pore, said electron-emitting region being comprised of a small gap between said lower electrode and upper electrode, said small gap being formed by an electroconductive body of a rim shape formed along an inner wall of said pore, and the upper electrode.
An electron-emitting device comprising a lower electrode, an insulating layer having a pore, and an upper electrode stacked in this order on a substrate,
- wherein an electron-emitting body is provided in said pore, and wherein the following condition is satisfied:
- 0.5×L≦t<2λ
- where t is a thickness of said upper electrode, L is a length of said pore, and λ is a mean free path of electron transmission of said upper electrode.
An electron-emitting device comprising a lower electrode, an insulating layer having a pore, and an upper electrode stacked in this order on a substrate, wherein an electron-emitting region is provided in said pore,
- said electron-emitting region being comprised of a small gap between said lower electrode and upper electrode, and wherein a distance from the small gap to a top surface of the upper electrode is not more than 200 nm.
A method for producing an electron-emitting device comprising a lower electrode, an insulating layer having a pore, and an upper electrode stacked in this order on a substrate, said electron-emitting device having a carbon deposit in said pore,
- said method comprising:
- a step of forming said lower electrode of a metal or a semiconductor on said substrate;
- a step of forming an anodic oxide layer on a surface of said lower electrode;
- a step of producing said carbon deposit in the pore of said anodic oxide layer by applying a voltage under existence of an organic material;
- and
- a step of forming the upper electrode.
A method for producing an electron-emitting device comprising a lower electrode, an insulating layer having a pore, and an upper electrode stacked in this order on a substrate, said electron-emitting device having a carbon deposit in said pore,
- said method comprising:
- a step of forming said lower electrode of a metal or a semiconductor on said substrate;
- a step of forming an anodic oxide layer in a surface of said lower electrode;
- a step of forming said upper electrode on said anodic oxide layer in said lower electrode;
- and
- a step of producing a carbon deposit in said pore of said anodic oxide layer by applying a voltage to said upper electrode and said lower electrode, under existence of an organic material.
Dependencies are inferred from the claim text.