Vibratory beam electromechanical resonator
AssigneeSTMicroelectronics S.r.l.
InventorsThomas Skotnicki, Didier Dutartre, Pascal Ribot
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Abstract
A resonator formed by the steps of defining an active single-crystal silicon layer delimited by a buried insulator layer, depositing a silicon-germanium layer by a selective epitaxy method so that the silicon-germanium layer grows above the active single-crystal silicon area, depositing by a non-selective epitaxy method a silicon layer and etching it according to a desired contour, and removing the silicon-germanium by a selective etching with respect to the silicon and to the insulator.
Claims5
An electromechanical resonator formed on an active heavily-doped single-crystal silicon area of a substrate, forming a first electrode delimited by an insulating area, including a single-crystal silicon layer resting on the insulating area by at least one of its ends and spaced apart from the active area.
Dependencies are inferred from the claim text.