High-frequency semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTaketo Kunihisa, Toshihide Nobusada, Kazuhiro Yahata
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Abstract
A semiconductor device includes a silicon substrate with a resistivity being raised by diffusing Au etc. therein, and includes both active elements and passive elements. The active elements are all placed within a semiconductor chip, and the semiconductor chip is flip-chip mounted over the silicon substrate. Such a case where the silicon substrate is heated due to a heating process for forming the active elements can be avoided, and therefore, diffusion of Au etc. from the silicon substrate into the semiconductor device can be avoided.
Claims9
A semiconductor device, comprising:
- a silicon substrate that contains at least one of Au, Pt, and Cu in a state of being diffused, and on which a first circuit element is formed without a heating process;
- and
- a semiconductor chip in which a second circuit element is formed by a heating process, the semiconductor chip being flip-chip mounted to the silicon substrate.
A semiconductor device, comprising:
- a silicon substrate that contains at least one of Au, Pt, and Cu in a state of being diffused, and on which a circuit element is formed without a heating process;
- and
- an electrode onto which a semiconductor chip, in which a circuit element is formed by a heating process, is to be flip-chip mounted.
Dependencies are inferred from the claim text.