Semiconductor switching device
AssigneeSanyo Electric Co., Ltd.
InventorsTetsuro Asano, Hitoshi Tsuchiya, Toshikazu Hirai
Life of this patent
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Abstract
A switching device receives two pairs of balanced signals and outputs one of the two pairs of the signals. The device is composed of two SPDT switches which share two control signals provided to the gates of the FET of the SPDT switches. The package of the device has eight external electrodes on the back side of the package. The eight external electrodes are configured so that they are aligned symmetrically with respect to the center line of the package. The device requires only a small package space and is suitable for mobile communication application such as cell phone accommodating CDMA and GPS signals.
Claims28
A semiconductor switching circuit device formed on a substrate, comprising:
- a first, a second, a third and a fourth field-effect transistor, each of said transistors having a source electrode, a gate electrode and a drain electrode which are formed on a channel layer of the substrate;
- a first, a second, a third and a fourth input terminal pad corresponding to the first, second, third and fourth transistors, respectively, the source electrode or the drain electrode of each of the four transistors being connected to the corresponding input terminal pad thereof;
- a first common output terminal pad connected to the source electrode or the drain electrode of the first transistor and connected to the source electrode or the drain electrode of the second transistor, the two electrodes of the first and second transistors which are connected to the first common output terminal pad not being connected to any of the input terminal pads;
- a second common output terminal pad connected to the source electrode or the drain electrode of the third transistor and connected to the source electrode or the drain electrode of the fourth transistor, the two electrodes of the third and fourth transistors which are connected to the second common output terminal pad not being connected to any of the input terminal pads;
- a first control terminal pad connected to the gate electrodes of the first and third transistors;
- and
- a second control terminal pad connected to the gate electrodes of the second and fourth transistors.
A switching device comprising:
- a semiconductor chip formed on a substrate, said semiconductor chip comprising a first, a second, a third and a fourth input terminal pad, a first and a second common output terminal pad and a first and a second control terminal pad, said semiconductor chip having no more than two control terminal pads;
- an insulating board having a conductor pattern thereon, said semiconductor chip being mounted on the conductor pattern;
- a plurality of external electrodes, each of said external electrodes being connected to a corresponding terminal pad of the chip;
- and
- a resin layer covering the chip and the insulating board;
- wherein each of the external electrodes is disposed near the corresponding terminal pad so that the external electrodes are aligned substantially symmetrically with respect to a center line of the insulating board.
A switching device comprising:
- a semiconductor chip formed on a substrate, said semiconductor chip comprising a first, a second, a third and a fourth input terminal pad, a first and a second common output terminal pad and a first and a second control terminal pad, said semiconductor chip having no more than two control terminal pads;
- an insulating resin film having a conductor pattern and the semiconductor chip embedded therein, said semiconductor chip being mounted on the conductor pattern;
- and
- a plurality of external electrodes, each of said external electrodes being connected to a corresponding terminal pad of the chip;
- wherein each of the external electrodes is disposed near the corresponding terminal pad so that the external electrodes are aligned substantially symmetrically with respect to a center line of the insulating resin film.
A semiconductor switching circuit device comprising:
- a first switch comprising two field-effect transistors each having a source electrode, a gate electrode, a drain electrode and an input terminal pad, and a common output terminal pad for the two transistors of the first switch, the source electrode or the drain electrode of each of the two transistors of the first switch being connected to the common output terminal pad of the first switch, and the source electrode or the drain electrode of each of the two transistors of the first switch which are not connected to the common output terminal pad of the first switch being connected to the input terminal pad thereof;
- a second switch comprising two field-effect transistors each having a source electrode, a gate electrode, a drain electrode and an input terminal pad, and a common output terminal pad for the two transistors of the second switch, the source electrode or the drain electrode of each of the two transistors of the second switch being connected to the common output terminal pad of the second switch, and the source electrode or the drain electrode of each of the two transistors of the second switch which are not connected to the common output terminal pad of the second switch being connected to the input terminal pad thereof;
- and
- two control terminal pads, one of the two control terminal pads being connected to a gate electrode of one of the two transistors of the first switch and a gate electrode of one of the two transistors of the second switch, and another of said two control terminal pads being connected to a gate electrode of another of the two transistors of the first switch and a gate electrode of another of the two transistors of the second switch.
A semiconductor switching circuit device comprising:
- four input terminal pads;
- two common output terminal pads;
- and
- no more than two control terminal pads.
Dependencies are inferred from the claim text.