Nanomechanical switches and circuits
AssigneeTexas Instruments Incorporated
InventorsGary A. Frazier, Alan C. Seabaugh
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AssigneeTexas Instruments Incorporated
InventorsGary A. Frazier, Alan C. Seabaugh
Estimating the term…
A highly miniaturized nanomechanical transistor switch is fabricated using a mechanical cantilever which creates a conductive path between two electrodes in its deflected state. In one embodiment, the cantilever is deflected by an electrostatic attraction arising from a voltage potential between the cantilever and a control electrode. In another embodiment, the cantilever is formed of a material with high magnetic permeability, and is deflected in response to complementary magnetic fields induced in the cantilever and in an adjacent electrode. The nanomechanical switch can be fabricated using well known semiconductor fabrication techniques, although semiconductor materials are not necessary for fabrication. The switch can rely upon physical contact between the cantilever and the adjacent electrode for current flow, or can rely upon sufficient proximity between the cantilever and the adjacent electrode to allow for tunneling current flow.
A nanomechanical switch comprising:
A nanomechanical switch comprising:
A logic circuit comprising:
28 A complementary pair nanomechanical circuit comprising:
29 A complementary pair nanomechanical circuit comprising:
The complementary pair nanomechanical circuit of claim 29 wherein the axis of motion is substantially parallel to a substrate upon which the electrodes are formed.
The complementary pair nanomechanical circuit of claim 29 wherein the free end of the cantilever member deflects in the first direction in response to a control voltage being applied to the first control electrode and moves in the second direction in response to a control voltage being applied to the second control electrode.
The complementary pair nanomechanical circuit of claim 29 wherein the first and second control electrodes are spaced apart from the cantilever member by a distance that is greater than the distance between the cantilever member and the source and drain electrodes.
An integrated circuit comprising:
Dependencies are inferred from the claim text.