Semiconductor memory device using megneto resistive element and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsKeiji Hosotani, Kentaro Nakajima
Life of this patent
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Abstract
A semiconductor memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction differing from the first direction, and a magneto resistive element arranged between the first and second wirings and comprising a first portion and a second portion, the second portion being in contact with the second wiring and extending along the second wiring to reach an outside region positioned outside the first portion.
Claims29
A semiconductor memory device, comprising:
- a first wiring extending in a first direction;
- a second wiring extending in a second direction differing from said first direction;
- and
- a magneto resistive element arranged between said first wiring and said second wiring and comprising a first portion and a second portion, said second portion being in contact with said second wiring and extending along said second wiring to reach an outside region positioned outside said first portion.
A method of manufacturing a semiconductor memory device provided with a magneto resistive element including a first portion and a second portion, comprising:
- extending said second portion along a second wiring to reach an outside region positioned outside said first portion by patterning said second portion together with said second wiring.
Dependencies are inferred from the claim text.