Semiconductor device with thin film having high permittivity and uniform thickness

A method of manufacturing a semiconductor device having a silicon layer, an electrode which is made of a metal or a metal nitride and which is formed on the silicon layer via a dielectric film interposed therebetween, wherein the dielectric film has a multi-layer structure comprising an amorphous oxide film on the side of the silicon layer and a metal oxide film on the side of the electrode, said method comprising:

• before forming the amorphous oxide film, terminating the surface of the silicon layer with hydrogen;
• and
• after separating hydrogen from the surface of the silicon layer, forming the amorphous oxide film on the silicon layer.

A method of manufacturing a semiconductor device having a silicon layer, an electrode which is made of silicon (Si) or silicon germanium (SiGe) and which is formed on the silicon layer via a dielectric film interposed therebetween, wherein the dielectric film has a multi-layer structure comprising a first amorphous oxide film on the side of the silicon layer, a second amorphous oxide film on the side of the electrode, and a metal oxide film interposed between the first and second amorphous oxide films, said method comprising:

• before forming the first amorphous oxide film, terminating the surface of the silicon layer with hydrogen;
• and
• after separating hydrogen from the surface of the silicon layer, forming the first amorphous oxide film on the silicon layer.