Semiconductor device
AssigneeSeiko Instruments Inc.
InventorsToshihiko Omi, Kazutoshi Ishii
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Abstract
A semiconductor device is provided in which each of contacts between a source and a drain of a MOS transistor and a metallic wiring is either a contact having an arbitrary one side longer than the other side, or source contacts and well contacts are made batting contacts each having an arbitrary one side of a diffusion region having the same polarity as that of a well shorter than the other side. Thus, the contact shape is longitudinal in a transistor width direction, which makes it possible that a large current is caused to flow with a small interval of gates thereof.
Claims11
A semiconductor device comprising a first MOS transistor and a contact between respective portions of a transistor and a metallic wiring of the first MOS transistor, characterized in that the contact has a shape such that a side, in a transistor length direction, of the contact is longer than a side in a transistor width direction.
A semiconductor device, wherein the first MOS transistor is a MOS transistor connected between terminals of the semiconductor device for a purpose of protecting one of an output stage of the semiconductor device and an internal circuit of the semiconductor device from the electrostatic breakdown, and the semiconductor device has one of voltage monitoring function of one of a voltage detector and a battery protection, and an over-current monitoring function.
Dependencies are inferred from the claim text.