Electrooptical substrate device and manufacturing method for same, electrooptical apparatus, electronic apparatus and manufacturing method for a substrate device
AssigneeSeiko Epson Corporation
InventorShigenori Katayama
Life of this patent
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Abstract
An electrooptical substrate device has pixel electrodes and pixel-switching TFTs connected thereto, on a substrate. The TFT is a P-channel TFT of an SOI structure that does not have a body contact. Due to this, a transistor is architected in each pixel that is suited to broaden the opening area in each pixel, and having comparatively high performance, thereby enabling bright, high-quality image display.
Claims30
An electrooptical substrate device, comprising:
- a substrate;
- an insulator layer;
- an N-type single-crystal semiconductor layer formed above said insulator layer and including a P-type source region, a P-type drain region and a channel region;
- a gate electrode formed above said single-crystal semiconductor layer in said channel region through a gate insulating film;
- a scanning line connected to said gate electrode;
- a data line connected to one of said source region and said drain region;
- and
- a pixel electrode connected to the other of said source region and said drain region,
- a P-channel transistor being architected by said single-crystal semiconductor layer, said gate insulating film and said gate electrode to switch-control said pixel electrode.
A method for manufacturing a substrate device having, above a substrate, an interlayer insulating film in which a hole is opened, and a conductor layer formed above said interlayer insulating film and provided in said hole, structuring at least a part of an electronic element or electronic circuit by said conductor layer above said substrate, the method comprising:
- opening said hole in said interlayer insulating film;
- forming a material film of a predetermined kind to be formed into said conductor layer above said interlayer insulating film in which is opened a hole;
- and
- implanting ions to said formed material film to thereby form said conductor layer, ions being implanted with an inclination by a predetermined angle X with respect to a centerline of said hole, such that ions are implanted to a region of said material film formed on a side surface of said hole, and said predetermined angle X being set within a range to implant ions to a region of said material film formed on a bottom surface of said hole.
Dependencies are inferred from the claim text.