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US 2002/0153544 A1Published application
Semiconductor device and its manufacturing method
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTamotsu Ogata
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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTamotsu Ogata
Estimating the term…
To improve a processibility of a contact hole by minimizing an aspect ratio of the contact hole to be connected to a semiconductor substrate from upper layers. A semiconductor device includes a capacitor that consists of a capacitor upper electrode, a capacitor lower electrode, and a capacitor dielectric film formed in a memory cell region on a semiconductor substrate through an interlayer insulating film, and a storage node pad electrode of a prescribed shape that consists of a film of the same layer as the capacitor lower electrode of the capacitor is formed on the interlayer insulating film in the regions other than the memory cell region. A contact plug to be connected to the semiconductor substrate from the upper layers can be connected to the semiconductor substrate through the storage node pad electrode, and the aspect ratio of the contact hole can be reduced.
A semiconductor device comprising a capacitor that consists of an upper electrode, a lower electrode, and a dielectric film formed in a memory cell region on a semiconductor substrate through an interlayer insulating film,
A method for manufacturing a semiconductor device, comprising,
Dependencies are inferred from the claim text.