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OwnerTakeshi Kijimainventor
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A method of manufacturing an oxide ferroelectric thin film of Bi, Ti and O by an MOCVD method on a substrate having an electrode formed thereon, comprises the step of supplying material gases capable of forming the oxide ferroelectric thin film onto the substrate, wherein an oxygen gas flow rate relative to a total gas flow rate of the material gases is controlled to a value required for obtaining the oxide ferroelectric thin film having a predetermined orientation and/or coercive field, and a flow rate of at least one of the material gases containing constituent elements other than oxygen constituting the oxide ferroelectric thin film is controlled so that a compositional ratio of the constituent elements other than oxygen constituting the oxide ferroelectric thin film is a value required for obtaining the oxide ferroelectric thin film having a predetermined residual polarization and/or relative dielectric constant.
A method of manufacturing an oxide ferroelectric thin film of Bi, Ti and O by an MOCVD method on a substrate having an electrode formed thereon, comprising the step of supplying material gases capable of forming the oxide ferroelectric thin film onto the substrate, wherein
A method of manufacturing an oxide ferroelectric thin film of Bi, Ti and O by an MOCVD method on a substrate having an electrode formed thereon, comprising the step of controlling a Bi/Ti compositional ratio by varying a flow rate of at least one of material gases containing constitutional elements other than oxygen constituting the oxide ferroelectric thin film, so as to control a density of crystal nucleation in the oxide ferroelectric thin film.
An oxide ferroelectric thin film formed directly on an electrode formed on a substrate, wherein the oxide ferroelectric thin film has a pillar-formed structure.
An oxide ferroelectric thin film formed directly on an electrode formed on a substrate, wherein orientation of the oxide ferroelectric thin film is one of a c-axis dominant orientation, a random orientation in which a c-axis orientation and a (117) orientation are mainly dominant, and a (117) dominant orientation, and a Bi/Ti compositional ratio is within a range of 0.4 to 1.5.
Dependencies are inferred from the claim text.