Structure and method for fabricating semiconductor structures and devices utilizing perovskite stacks

A semiconductor structure comprising:

• a monocrystalline substrate;
• a perovskite stack overlying said substrate, wherein said perovskite stack comprises:
• a first accommodating layer formed of a first monocrystalline perovskite oxide material having a first lattice constant;
• and
• a second accommodating layer formed of a second monocrystalline perovskite oxide material having a second lattice constant, wherein said first lattice constant is different from said second lattice;
• a monocrystalline buffer layer overlying said perovskite stack;
• and
• a monocrystalline material layer overlying said monocrystalline buffer layer,
• wherein a strain is effected at least at one of an interface between said perovskite stack and said substrate, an interface between said perovskite stack and said monocrystalline buffer layer, and an interface between said first and said second accommodating layers, and wherein said strain reduces defects in said monocrystalline material layer.

A semiconductor structure comprising:

• a monocrystalline substrate;
• a perovskite stack overlying said substrate, wherein said perovskite stack comprises alternating first layers formed of a first monocrystalline perovskite oxide material having a first lattice constant and second layers formed of a second monocrystalline perovskite oxide material having a second lattice constant, wherein said first lattice constant is different from said second lattice constant;
• and
• a monocrystalline material layer overlying said perovskite stack,
• wherein a strain is effected at least at one of an interface between said perovskite stack and said substrate, an interface between said perovskite stack and said monocrystalline material layer, and an interface between one of said first layers and one of said second layers, and wherein said strain reduces defects in said monocrystalline material layer.

A semiconductor structure comprising:

• a monocrystalline substrate;
• a perovskite stack overlying said substrate, wherein said perovskite stack comprises alternating first layers formed of a first monocrystalline perovskite oxide material having a first lattice constant and second layers formed of a second monocrystalline perovskite oxide material having a second lattice constant, wherein said first lattice constant is different from said second lattice constant;
• a monocrystalline buffer layer overlying said perovskite stack;
• and
• a monocrystalline material layer overlying said monocrystalline buffer layer,
• wherein a strain is effected at least at one of an interface between said perovskite stack and said substrate, an interface between said perovskite stack and said monocrystalline buffer layer, and an interface between one of said first layers and one of said second layers, and wherein said strain reduces defects in said monocrystalline material layer.

A process for fabricating a high quality semiconductor structure exhibiting low Schottky leakage current, said method comprising:

• providing a monocrystalline substrate;
• epitaxially growing a first accommodating layer on said substrate, wherein said first accommodating layer is formed of a first monocrystalline perovskite oxide material having a first lattice constant;
• epitaxially growing a second accommodating layer on said first accommodating layer, wherein said second accommodating layer is formed of a second monocrystalline perovskite oxide material having a second lattice constant, and wherein said first lattice constant is different from said second lattice constant;
• and
• epitaxially growing a monocrystalline material layer overlying said second accommodating layer,
• wherein a strain is effected at least at one of an interface between said first accommodating layer and said substrate, an interface between said second accommodating layer and said monocrystalline material layer, and an interface between said first and said second accommodating layers, and wherein said strain reduces defects in said monocrystalline material layer.

A process for fabricating a high quality semiconductor structure exhibiting low Schottky leakage current, said method comprising:

• providing a monocrystalline substrate;
• epitaxially growing alternating first layers and second layers to form a perovskite stack overlying said substrate, wherein said first layers are formed of a first monocrystalline perovskite oxide material having a first lattice constant and said second layers are formed of a second monocrystalline perovskite oxide material having a second lattice constant that is different from said first lattice constant;
• and
• epitaxially growing a monocrystalline material layer overlying said perovskite stack,
• wherein a strain is effected at least at one of an interface between said perovskite stack and said substrate, an interface between said perovskite stack and said monocrystalline material layer, and an interface between one of said first and one of said second layers, and wherein said strain reduces defects in said monocrystalline material layer.

A process for fabricating a semiconductor structure comprising:

• providing a monocrystalline silicon substrate having a first lattice constant;
• selecting a first material that when properly oriented has a second lattice constant and crystalline structure such that the first material can be deposited as a monocrystalline film overlying the monocrystalline silicon substrate, the second lattice constant being different than the first lattice constant;
• depositing a first monocrystalline film of the first material overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects, the monocrystalline film being strained because the first lattice constant is different than the second lattice constant;
• forming an amorphous interface layer at an interface between the first monocrystalline film and the monocrystalline silicon substrate, the amorphous interface layer having a thickness sufficient to relieve the strain in the first monocrystalline film;
• selecting a second material that when properly oriented has a third lattice constant and crystalline structure such that the second material can be deposited as a monocrystalline film overlying the first monocrystalline film, the third lattice constant being different than the second lattice constant;
• depositing a second monocrystalline film of the second material overlying the first monocrystalline film;
• selecting a compound semiconductor material having a fourth lattice constant that is different from the first lattice constant and that when properly oriented can be deposited on the second monocrystalline film as a monocrystalline compound semiconductor material;
• and
• epitaxially depositing a monocrystalline layer of the compound semiconductor material overlying the second monocrystalline film;
• wherein the second lattice constant is selected to be intermediate to the first and fourth lattice constants.

A process for fabricating a semiconductor structure comprising:

• providing a moncrystalline silicon substrate;
• depositing a first monocrystalline perovskite oxide film with a first lattice constant overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects;
• forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the first monocrystalline perovskite oxide film and the monocrystalline silicon substrate;
• depositing a second monocrystalline perovskite oxide film with a second lattice constant overlying the first monocrystalline oxide film, wherein said first lattice constant is different from said second lattice constant;
• and
• epitaxially forming a monocrystalline compound semiconductor layer overlying the second monocrystalline perovskite oxide film.