Silicon nitride film comprising amorphous silicon quantum dots embedded therein, its fabrication method and light-emitting device using the same
AssigneeKwangju Institute of Science and Technology
InventorsNae Man Park, Tae Soo Kim, Seong Ju Park
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Abstract
The present invention relates to a light-emitting device utilizing amorphous silicon quantum dot nanostructures, wherein the light-emitting device can be fabricated using the existing silicon semiconductor fabrication technology, is excellent in light-emitting efficiency, and can emit light in the visible region including short wavelength region such as green and blue.
Claims11
A silicon nitride thin film comprising:
- a silicon nitride matrix;
- and
- amorphous silicon quantum dot nanostructures embedded in the silicon nitride matrix.
Method of fabricating a silicon nitride thin film comprising a silicon nitride matrix and amorphous silicon quantum dot nanostructures embedded in the silicon nitride matrix, the method comprising the steps of:
- placing a substrate within a thin film growth system;
- and
- supplying silicon source gas and nitrogen source gas into the thin film growth system in a flow ratio of 1:100 to 1:5000 while maintaining the substrate at a temperature of 100 to 700° C. in order to form the silicon nitride film on the substrate with a growth rate of 1.4 to 10 nm/min.
A silicon light-emitting device including a silicon nitride thin film as an insulator layer, wherein the silicon nitride thin film comprises:
- a silicon nitride matrix;
- and amorphous silicon quantum dot nanostructures embedded in the silicon nitride matrix.
Dependencies are inferred from the claim text.