Room temperature quantum well infrared detector
OwnerHui Chun Liuinventor
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Abstract
An infrared photodetector for high absorption efficiency at room or near room temperature is disclosed. The invention teaches a special design of quantum wells to obtain the desired performance. A quantum well infrared photodetector having a multi-quantum well structure for providing high absorption at room temperature and providing substantial dark current at room temperature is disclosed. The device also has contacts for receiving current from the multi-quantum well structure.
Claims23
A quantum well infrared photodetector comprising:
- a plurality of doped quantum well layers forming a multi-quantum well structure for providing high absorption at temperatures other than low temperatures;
- and,
- contact layers for receiving current from the plurality of quantum well layers.
A quantum well infrared photodetector comprising:
- a plurality of doped quantum well layers forming a multi-quantum well structure for providing high absorption and dark current at temperatures other than low temperatures;
- and,
- contact layers for receiving current from the plurality of quantum well layers.
A quantum well infrared photodetector comprising:
- a plurality of quantum well layers formed of a first semiconductor material and doped forming a multi-quantum well structure for providing high absorption at temperatures other than low temperatures and substantial dark current;
- barriers between the quantum well layers formed of a second semiconductor material;
- and,
- contact layers comprising a third doped semiconductor.
A method of detecting infrared radiation comprising the steps of:
- detecting infrared radiation with a quantum well device absent cryogenic cooling;
- and, determining an intensity of the detected infrared radiation.
Dependencies are inferred from the claim text.