Laser irradiating apparatus and method of manufacturing semiconductor apparatus

A method for manufacturing a semiconductor device comprising:

• forming a semiconductor film on an insulating surface;
• irradiating laser light to the semiconductor film and forming a crystallized semiconductor film and an oxidized film on the crystallized semiconductor film;
• removing the oxidized film;
• and
• blowing an inert gas to the crystallized semiconductor film without intrusion of the air and, at the same time, irradiating laser light thereto in order to flatten the surface of the crystallized semiconductor film.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor film on an insulating surface;
• irradiating laser light to the semiconductor film and forming a crystallized semiconductor film and an oxidized film on the crystallized semiconductor film;
• oxidizing the surface of the crystallized semiconductor film by using solution containing ozone;
• removing the oxidized film;
• and
• blowing an inert gas to the crystallized semiconductor film without intrusion of the air and, at the same time, irradiating laser light thereto in order to flatten the surface of the crystallized semiconductor film.

A laser irradiating apparatus, comprising:

• a laser oscillator;
• an optical system;
• a plate having an opening portion from which a gas is injected;
• a stage on which a substrate is located;
• and
• means of injecting a gas from the plate and levitating the plate above the substrate located on the stage.

A laser irradiating apparatus, comprising:

• a laser oscillator;
• an optical system;
• a plate having an opening portion from which a gas is injected and a window having transparency against laser light emitted by the laser oscillator;
• a stage on which a substrate is located;
• and
• means of injecting a gas from the plate and levitating the plate above the substrate located on the stage.

A laser irradiating apparatus, comprising:

• a laser oscillator;
• a first blocking plate;
• an optical system located in a space divided by the first blocking plate and to which an inert gas is charged;
• a stage on which a substrate is located;
• and
• a second blocking plate between the stage and the optical system,
• wherein the first blocking plate has a window formed by a material having transparency against laser light emitted by the laser oscillator;
• and
• wherein the second blocking plate has an opening portion through which laser light passes and causing a gas to inject from the opening portion.

A method for manufacturing a semiconductor device comprising:

• forming a semiconductor film on an insulating surface;
• irradiating laser light to the semiconductor film and forming a crystallized semiconductor film;
• and
• blowing an inert gas to the crystallized semiconductor film without intrusion of the air and, at the same time, irradiating laser light thereto in order to flatten the surface of the crystallized semiconductor film.