Substrate processing method and substrate processing unit
AssigneeTokyo Electron Limited
InventorsKoji Harada, Ryoichi Uemura
Life of this patent
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Abstract
Process gas supply/stop operations are intermittently performed. As the hydrophobic process progresses, the temperature of a gas contract portion of a wafer lowers. While the hydrophobic process stops, the temperature of the gas contact portion of the wafer rises to the original temperature. Thereafter, the hydrophobic process resumes. Thus, while the temperature of the gas contact portion of wafer is suppressed from largely lowering, the hydrophobic process can be performed. Thus, non-uniformity of the hydrophobic process on the front surface of the wafer is reduced.
Claims25
A method for processing a substrate in an airtight vessel with a process gas, the method comprising the steps of:
- (a) conveying the substrate into the airtight vessel;
- and
- (b) supplying the process gas to the airtight vessel in which the substrate has been conveyed while controlling the flow rate of the process gas.
A substrate processing unit, comprising:
- an airtight vessel having a substrate holding portion;
- process gas supplying means for supplying process gas to the airtight vessel;
- and
- controlling means for controlling the flow rate of the process gas supplied to the airtight vessel.
Dependencies are inferred from the claim text.