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US 2002/0153246 A1Published application
Method and apparatus for electropolishing metal interconnections on semiconductor devices
AssigneeACM Research, Inc.
InventorHui Wang
Life of this patent
Estimating the term…
Abstract
An apparatus for electropolishing a wafer includes a wafer chuck and a stationary jet. The wafer chuck is configured to rotate and translate the wafer. The stationary jet is configured to apply an electrolyte to the wafer when the wafer is translated and rotated by the wafer chuck.
Claims35
An apparatus for electropolishing a wafer comprising:
- a wafer chuck configured to rotate and translate the wafer;
- and
- a stationary jet configured to apply an electrolyte to the wafer when the wafer is translated and rotated by the wafer chuck.
An apparatus for electropolishing a metal layer on a surface of a wafer, the apparatus comprising:
- a jet configured to apply a stream of electrolyte to the metal layer on the wafer surface;
- and
- a wafer chuck configured to translate the wafer in a direction perpendicular to the wafer surface while the jet is held stationary when the stream of electrolyte is applied to the wafer surface,
- wherein the wafer chuck is configured to rotate the wafer as the wafer is translated.
1 more element
A method of electropolishing a metal layer formed on a surface of a wafer, the method comprising:
- applying electrolyte to a portion of the metal layer through a jet;
- rotating the wafer;
- and
- translating the wafer while rotating the wafer and while the jet is held station to expose successive portion of the metal layer on the wafer surface to the electrolyte.
1 more element
Dependencies are inferred from the claim text.