Electroetching process and system
AssigneeNutool, Inc.
InventorsBulent M. Basol, Cyprian Uzoh, Halit N. Yakupoglu, Homayoun Talieh
Life of this patent
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Abstract
A system for optionally depositing or etching a layer of a wafer includes mask plate opposed to the wafer with the mask plate having a plurality of openings that transport a solution to the wafer. An electrode assembly has a first electrode member and a second electrode member having channels that operatively interface a peripheral and center part of the wafer. The channels transport the solution to the mask.
Claims45
A system for etching a wafer having a conductive front surface, the system comprising:
- a cathode assembly having at least two cathode members, wherein each cathode members has the ability to receive its own power;
- and
- a first etching solution contacting said at least two cathode members, wherein the cathode members are electrically isolated from one another.
A system for optionally depositing or removing a layer of a wafer, comprising:
- a mask plate opposed to said wafer;
- said mask plate having a plurality of openings that transport a solution to said wafer;
- an electrode assembly having a first electrode member and a second electrode member;
- said first electrode member having a plurality of first channels that operatively interface a first part of said wafer;
- said first channels transport said solution to said mask;
- said second electrode member having a plurality of second channels that operatively interface a second part of said wafer;
- and
- said second channels transport said solution to said mask.
The system of 28, wherein said first and second electrode members are disposed side-by-side to one another.
A process for partially removing a conductive front surface of a semiconductor wafer having a conductive front surface, the process comprising the steps of:
- (a) positioning the conductive front surface above a cathode assembly which comprises multiple cathode members;
- (b) providing an etch solution that wets said cathode members and said conductive front surface;
- (c) connecting said multiple cathode members to multiple power sources, wherein said multiple cathode members are substantially electrically isolated from one another;
- (d) applying power to said cathode members from said multiple power sources;
- (e) positioning a mask plate between said cathode assembly and said conductive front surface of said wafer;
- and
- (f) flowing said etch solution through said mask plate so that said etch solution wets said conductive front surface.
A process for etching or depositing a layer of a semiconductor wafer, the process comprising the steps of:
- (a) flowing a solution through an electrode assembly which comprises a first electrode member and a second electrode member;
- (b) transporting said solution from said electrode assembly and to a mask plate that interfaces said wafer;
- (c) wetting selected parts of said wafer with said solution;
- and
- (d) applying a current to said selected parts of said wafer.
Dependencies are inferred from the claim text.